Zobrazeno 1 - 10
of 54
pro vyhledávání: '"P. N. Favennec"'
Publikováno v:
Journal de Physique III. 4:997-1009
On rappelle d'abord la mise en oeuvre d'une nouvelle methode isotherme appelee FTDLTS (Fourier Transform Deep Level Transient Spectroscopy) dont le pouvoir separateur en constante de temps est nettement superieur a celui des methodes DLTS classiques.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::92bc08ccd87723bcf26b71bc139663a0
https://doi.org/10.1051/jp3:1994180
https://doi.org/10.1051/jp3:1994180
Autor:
M. Kechouane, M. Gauneau, M. Salvi, M.G. Karkut, H. L'Haridon, André Perrin, C. Thivet, P. N. Favennec, Maryline Guilloux-Viry
Publikováno v:
Journal of Materials Science. 28:4934-4939
YBa2Cu3O7 (YBCO) superconducting thin films have been grown in situ on single-crystal (1 0 0) MgO substrates by single target d.c. sputtering or laser ablation. The films were highly textured, with full c-axis orientation, as shown by standard θ–2
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4a92201b644bac25f66cccd64483f3d8
https://doi.org/10.1007/bf00361158
https://doi.org/10.1007/bf00361158
Publikováno v:
ChemInform. 22
This paper reports that erbium is of particular interest in telecommunication systems because of its sharp and intense photoemission at 1.54 {mu}m. However, erbium is difficult to incorporate at high concentrations in the semiconductor matrix and pre
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::88595e7a23cb1e728367c2e4dd0150fc
https://doi.org/10.1002/chin.199134010
https://doi.org/10.1002/chin.199134010
Publikováno v:
Physica Status Solidi (a). 132:145-154
Double correlation deep level transient spectroscopy (DDLTS) is used to study the deep centers in oxygen-implanted and (oxygen + silicon) co-implanted LEC n-GaAs samples in the range of 260 to 450 K. Two deep centers are detected and characterized. O
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2b12a0d2a72d8113c160908a7b72fecf
https://doi.org/10.1002/pssa.2211320115
https://doi.org/10.1002/pssa.2211320115
Publikováno v:
Semiconductor Science and Technology. 7:A32-A35
The scanning photoluminescence technique at room temperature was applied to characterize the quality of ion-implanted indium phosphide as well as to investigate the defect recovery as a function of the annealing temperature. Doses ranging from 1010 t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dde6a51d6fd5df2536bdbd0b93f36ce2
https://doi.org/10.1088/0268-1242/7/1a/006
https://doi.org/10.1088/0268-1242/7/1a/006
Publikováno v:
Journal of The Electrochemical Society. 138:1761-1764
This paper reports that erbium is of particular interest in telecommunication systems because of its sharp and intense photoemission at 1.54 {mu}m. However, erbium is difficult to incorporate at high concentrations in the semiconductor matrix and pre
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0c1b144a2721e3e0877bcbc8c520002d
https://doi.org/10.1149/1.2085869
https://doi.org/10.1149/1.2085869
Publikováno v:
Applied Physics Letters. 59:1872-1874
Anomalous elevations up to 6 μm of the ion‐implanted GaSb surface were observed. This swelling phenomenon is related to the formation of a porous layer and is dependent on the mass, energy, and dose of the implanted ions. A strong amount of oxygen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::62018f47cd60e27a25f4329b6e3e2486
https://doi.org/10.1063/1.106173
https://doi.org/10.1063/1.106173
Publikováno v:
Japanese Journal of Applied Physics. 29:L524
Luminescence spectra and SIMS measurements of Er-doped silicon are presented in this paper. Luminescence was found to be stronger in Czochralski-grown Si crystals, known to contain up to 1018 cm-3 of oxygen center. Direct role played by oxygen impuri
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b653839697d9856abca9285a4e7cf7e1
https://doi.org/10.1143/jjap.29.l524
https://doi.org/10.1143/jjap.29.l524
Publikováno v:
Electronics Letters. 26:1119
The crystalline order and itoechiomctry of the near surface of GaAs and InP substrates after rapid thermal annealing using a silicon wafer as a protecting cap have been deduced from angle resolved X-ray photo-emission measurements. A monolayer of As
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::71ae355ede8514b67225952056d0f961
https://doi.org/10.1049/el:19900724
https://doi.org/10.1049/el:19900724
Publikováno v:
Electronics Letters. 26:1556
The rare earth element erbium was implanted into various semiconductors. Photoluminescence of the erbium implanted layer is studied. The peak wavelength is centred at 1.54 =m wavelength and has about the same maximum intensity whatever the host mater
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::726f40995baab6a62bbd85217503b369
https://doi.org/10.1049/el:19900999
https://doi.org/10.1049/el:19900999