Zobrazeno 1 - 10
of 24
pro vyhledávání: '"P. N., Hai"'
Autor:
H. H. Huy, J. Sasaki, N. H. D. Khang, S. Namba, P. N. Hai, Q. Le, B. York, C. Hwang, X. Liu, M. Gribelyuk, X. Xu, S. Le, R. Nagabhirava, M. Ho, H. Takano
Publikováno v:
IEEE Transactions on Magnetics. 59:1-4
Autor:
M. Kobayashi, N. H. D. Khang, T. Takeda, K. Araki, R. Okano, M. Suzuki, K. Kuroda, K. Yaji, K. Sugawara, S. Souma, K. Nakayama, K. Yamauchi, M. Kitamura, K. Horiba, A. Fujimori, T. Sato, S. Shin, M. Tanaka, P. N. Hai
Mn$_{1-x}$Ga$_x$ (MnGa) with the $L1_0$ structure is a ferromagnetic material with strong perpendicular magneto-crystalline anisotropy. Although MnGa thin films have been successfully grown epitaxially and studied for various spintronics devices, fun
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0c07f215c5e28c5fd7e87ca49416ee26
http://arxiv.org/abs/2203.12182
http://arxiv.org/abs/2203.12182
Autor:
Amemiya, Tomohiro, Shimizu, Hiromasa, Yokoyama, Masahumi, P. N., Hai, Tanaka, Masaaki, Nakano, Yoshiaki
Publikováno v:
IEICE Technical Report. 106(No. 435):19-22
Autor:
P. N. Hai, Weimin Chen, Tanja Paskova, Plamen Paskov, Isamu Akasaki, Galia Pozina, J. P. Bergman, Bo Monemar, Irina Buyanova, Hiroshi Amano
Publikováno v:
Materials Science and Engineering: B. 93:112-122
Recent developments in material properties of GaN and related heterostructure combinations are reviewed, with emphasis on optical data. We discuss recent polarized photoluminescence (PL) data on the free excitons in GaN, obtained from thick HVPE grow
Publikováno v:
Physica E: Low-dimensional Systems and Nanostructures. 13:1074-1077
Type I band line-up in GaNxAs1−x/GaAs multiple quantum wells (MQW) with xless-than-or-equals, slant3% is concluded based on the following experimental results: (i) a comparable radiative decay time of the GaNAs-related photoluminescence (PL) measur
Publikováno v:
Materials Science and Engineering: B. 82:143-147
We review our recent results on optical characterization of MBE-grown GaNAs/GaAs quantum structures with N content up to 4.5%, by employing photoluminescence (PL), PL excitation, and time-resolved PL spectroscopies. The dominant PL mechanism has been
Autor:
Erik Janzén, Nguyen Tien Son, Mt. Wagner, Alexsandre Ellison, Bo Monemar, P. N. Hai, Christer Hallin, Weimin Chen
Publikováno v:
Semiconductor Science and Technology. 14:1141-1146
Optically detected magnetic resonance (ODMR) was used for study of defects in n-type 6H-SiC. Four ODMR spectra related to spin S = 1 centres were observed. Two of these centres, labelled a and b, have a trigonal symmetry with the symmetry axis along
Autor:
J. L. Lindström, Bo Monemar, Pham Thanh Huy, Tom Gregorkiewicz, Weimin Chen, P. N. Hai, Erik Janzén, Nguyen Tien Son, C.A.J. Ammerlaan
Publikováno v:
Physica B-Condensed Matter, 273-274, 655-658. Elsevier
Defects in p-type 4H and 6H SiC irradiated by 2.5 MeV electrons were studied by electron paramagnetic resonance (EPR). Two anisotropic EPR spectra, labeled I and II, were observed in both 4H and 6H SiC. These spectra demonstrating triclinic symmetry
Publikováno v:
Applied Physics Letters. 78:2843-2845
Polymer-like and diamond-like hydrogenated amorphous carbon films, characterized by high spin concentrations of 1020 cm−3, have been studied by multiple frequency electron paramagnetic resonance (EPR) spectroscopy at 9, 35, and 94 GHz. Whereas the
Publikováno v:
Materials Science and Engineering: B. 82:218-220
Effective masses and carrier recombination in GaNAs/GaAs quantum wells (QWs) with nitrogen composition up to 4.5%, have been studied by optical detection of cyclotron resonance (ODCR). When monitoring the PL emissions under the conditions of above-Ga