Zobrazeno 1 - 10
of 65
pro vyhledávání: '"P. M. Raccah"'
Autor:
P. M. Raccah, V. E. Henrich
Publikováno v:
International Journal of Quantum Chemistry. 4:797-800
Measurements on an absolute scale of the first nine structure factors of Al have been performed. Excellent agreement with calculations using the Hartree-Fock exchange potential was found for all but the first two, where solid state effects are import
Publikováno v:
Thin Solid Films. 233:148-152
The usual procedure for obtaining critical-point energies and linewidths from spectroscopic ellipsometry (SE) data is numerically to smooth and differentiate those data and then to fit them to parametrized theoretical functional forms. That procedure
Publikováno v:
Physical Review B. 47:1876-1888
In a previous paper, the authors proposed a model for the optical dielectric function of zinc-blende semiconductors. It was found to be more generally valid than previous models. In this paper, it is used to obtain an analytic expression for the diel
Publikováno v:
Review of Scientific Instruments. 63:2958-2966
Spectroscopic ellipsometry using photoelastic modulator [phase modulated spectroscopic ellipsometry (PMSE)] has been improved in the spectral range. Spectroscopic ellipsometry using the rotating analyzer [rotating analyzer spectroscopic ellipsometry
Publikováno v:
Semiconductor Science and Technology. 6:A146-A151
The authors report the results of optical and electrical measurements performed on two pseudomorphic ZnSe/n+GaAs heterojunctions in which the ZnSe was grown by molecular beam epitaxy. One of the ZnSe epilayers was doped as a p-n junction using Li and
Publikováno v:
Semiconductor Science and Technology. 6:A152-A156
Electrolyte electroreflectance (EER) is used to investigate the interface between undoped ZnSe and heavily n-doped GaAs. The evolution of the signal with bias allows an identification of the various features in the EER spectra. The spectra allow us t
Autor:
D. Yang, P. M. Raccah, J. W. Garland, F. A. Chambers, Carlo Coluzza, G. Devane, P. Frankl, Mario Capizzi
Publikováno v:
Physica B: Condensed Matter. 170:557-560
We have studied by electrolyte electroreflectance and photoluminescence a GaAs/AlGaAs resonant tunneling structure (RTS) with a highly n-doped GaAs cap, before and after hydrogenation. We measured the amount of passivation of shallow donor states and
Publikováno v:
Physical Review B. 41:7602-7610
It is not possible to obtain accurate critical-point linewidths or energies directly from spectroscopic ellipsometry, reflectance, or even thermoreflectance or piezoreflectance line shapes without first differentiating those line shapes. On the other
Publikováno v:
Applied Physics Letters. 56:42-44
We have used electrolyte electroreflectance (EER) to characterize ZnSe/GaAs and ZnSe/AlAs interfaces. The great sensitivity of EER to interface space‐charge regions enabled us to detect both interface crossover transitions and transitions to triang
Publikováno v:
Physical Concepts and Materials for Novel Optoelectronic Device Applications II.
Electroreflectance (ER) is a modulation technique which measures the change in reflectance of a semiconductor when an electric field is applied. Vacuum electroreflectance (VER), a new way of performing the experiment without making contact to the fro