Zobrazeno 1 - 3
of 3
pro vyhledávání: '"P. M. Pitner"'
Autor:
Thierry Weil, E. Wolak, Kevin L. Lear, Byung-Gook Park, D. Thomas, James S. Harris, P. M. Pitner, E. S. Hellman
Publikováno v:
Applied Physics Letters. 53:201-203
The effect of impurities placed in the wells of double‐barrier resonant tunneling diodes on the current‐voltage characteristics was experimentally determined. Four different double‐barrier structures were grown by molecular beam epitaxy with n
Autor:
E. S. Hellman, Kevin L. Lear, P. M. Pitner, Byung-Gook Park, James S. Harris, D. Thomas, Thierry Weil, E. Wolak
Publikováno v:
SPIE Proceedings.
The effect of impurities placed in double barrier resonant tunneling diodes, on the current voltage characteristics of the devices was experimentally determined. Four different double barrier structures were grown by Molecular Beam Epitaxy with n-typ
Autor:
D. Liu, E. S. Hellman, A. Harwit, G. W. Yoffe, James S. Harris, B. Caffee, P. M. Pitner, T. Hierl
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 4:574
Conventional mounting techniques in molecular beam epitaxy using indium to solder GaAs substrates to molybdenum blocks result in a rough back side which is incompatible with integrated circuit processing. We present the design of a new substrate hold