Zobrazeno 1 - 10
of 48
pro vyhledávání: '"P. M. Lytvyn"'
Autor:
Emmanuel Wangila, Calbi Gunder, Petro M. Lytvyn, Mohammad Zamani-Alavijeh, Fernando Maia de Oliveira, Serhii Kryvyi, Hryhorii Stanchu, Aida Sheibani, Yuriy I. Mazur, Shui-Qing Yu, Gregory Salamo
Publikováno v:
Crystals, Vol 14, Iss 5, p 414 (2024)
Ge1−xSnx growth on a new sapphire platform has been demonstrated. This involved the growth of GeSn on Ge/GaAs layers using the algorithm developed. The resultant growths of Ge on GaAs/AlAs/sapphire and Ge1−xSnx on Ge/GaAs/AlAs/sapphire were inves
Externí odkaz:
https://doaj.org/article/6aaf73730ff746378b763ebdd942b523
Autor:
Oleksandr M. Slobodian, Peter M. Lytvyn, Andrii S. Nikolenko, Victor M. Naseka, Oleg Yu. Khyzhun, Andrey V. Vasin, Stanislav V. Sevostianov, Alexei N. Nazarov
Publikováno v:
Nanoscale Research Letters, Vol 13, Iss 1, Pp 1-11 (2018)
Abstract Graphene oxide (GO) films were formed by drop-casting method and were studied by FTIR spectroscopy, micro-Raman spectroscopy (mRS), X-ray photoelectron spectroscopy (XPS), four-points probe method, atomic force microscopy (AFM), and scanning
Externí odkaz:
https://doaj.org/article/a5e7a5107afb48f7af728c49d7e8ed38
Autor:
B. T. Ratov, V. A. Mechnik, N. A. Bondarenko, V. V. Strelchuk, T. A. Prikhna, V. M. Kolodnitskyi, A. S. Nikolenko, P. M. Lytvyn, I. M. Danylenko, V. E. Moshchil, E. S. Gevorkyan, V. A. Chishkala, A. S. Kosminov, A. A. Shukmanova
Publikováno v:
Journal of Superhard Materials. 44:1-11
Autor:
Z.V. Maksimenko, P. M. Lytvyn, B. Romanyuk, Т.M. Sabov, О.Yo. Gudymenko, О.V. Dubikovskyi, O.A. Kulbachynskyi, О.O. Efremov, V. P. Kladko, Viktor Melnik, О.I. Liubchenko, О.V. Kosulya
Publikováno v:
Semiconductor Physics, Quantum Electronics and Optoelectronics. 24:362-371
VOx films deposited using the multistep method have been investigated. These films were deposited by repeating the two-stage method of low-temperature deposition – low-temperature annealing. The structure and characteristics of VOx thin films have
Autor:
S. N. Dub, A. S. Nikolenko, P. M. Lytvyn, S. O. Ivakhnenko, V. V. Strelchuk, O. M. Suprun, V. V. Lysakovskii, I. M. Danilenko
Publikováno v:
Journal of Superhard Materials. 43:379-391
Autor:
Andrii Nikolenko, P. M. Lytvyn, Viktor Moshchil, M. O. Bondarenko, Edwin Gevorkyan, Tetiana Prikhna, B. T. Ratov, V. V. Strelchuk, A. S. Kosminov, A. R. Borash, V. M. Kolodnitskyi, V. A. Mechnik, I. M. Danylenko
Publikováno v:
Journal of Superhard Materials. 43:344-354
We prepared samples of composites based on tungsten carbide and cobalt with different concentrations (0–10 wt %) of chromium diboride, 10 mm in diameter and 8 mm in thickness, by cold pressing followed by vacuum hot pressing. A comprehensive study
Autor:
S.O. Ivakhnenko, P. M. Lytvyn, I. M. Danylenko, S.V. Malyuta, T.V. Kovalenko, Andrii Nikolenko, V. V. Strelchuk
Publikováno v:
Semiconductor Physics, Quantum Electronics and Optoelectronics. 24:261-271
Semiconducting boron-doped diamond single crystals of cubo-octahedral habit with prevalent development of octahedron {111} faces and insignificant area of cube {001}, rhombo-dodecahedron {110} and tetragon-trioctahedron {311} faces were obtained usin
Publikováno v:
Journal of Superhard Materials. 43:457-459
Autor:
O. K. Marchuk, A. K. Sinelnichenko, A. O. Kozak, Volodymyr Ivashchenko, P. M. Lytvyn, A.A. Onoprienko, P. L. Skrynskyy, E. I. Olifan
Publikováno v:
Journal of Superhard Materials. 43:100-110
—The Ti–Al–C and Ti–Al–Si–C films have been deposited on Si(100) substrates by dual DC magnetron sputtering of the Ti–Al composite, graphite, and SiC targets at various sputtering currents. The effects of the sputtering current and anne
Autor:
V. O. Kotsyubynsky, A. B. Grubyak, V. V. Moklyak, A. O. Kotsyubynsky, P. M. Lytvyn, I. M. Fodchuk
Publikováno v:
METALLOFIZIKA I NOVEISHIE TEKHNOLOGII. 41:529-548