Výsledky vyhledávání - "P. M. Kurilo"

Concentration dependence of the hall factor in n-type silicon

Autor: V. M. Nitsovich, P. M. Kurilo, V. S. Lutsyak, I. G. Kirnas, P. G. Litovchenko

Publikováno v: Physica Status Solidi (a). 23:K123-K127

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::7c26026b543cbd9f1714400f0ee4f207
https://doi.org/10.1002/pssa.2210230250

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Excitation functions of reactions caused by the interaction of protons with energies of up to 67 MeV and nuclei of silicon and iron

Autor: V. S. Bulkin, V. D. Sklyarenko, V. A. Kuz'menko, Yu. N. Lobach, P. M. Kurilo, A. F. Ogorodnik, I. F. Barchuk, V. S. Prokopenko, V. V. Tokarevskii

Publikováno v: Soviet Atomic Energy. 63:528-532

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::65c6b7932ba39a5d538189c81ebb1109
https://doi.org/10.1007/bf01125152

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The influence of oxygen on the concentration dependence of electron mobility in silicon

Autor: P. C. Litovchenko, V. M. Nitsovich, V. S. Lutsyak, P. M. Kurilo, I. G. Kirnas

Publikováno v: Physica Status Solidi (a). 21:419-425

Theoretical and experimental investigations of the concentration dependence of mobility were carried out at T = 300 and 77 °K in the concentration range from 1012 up to 5 × 1017 cm−3. For non-oxidized, highly pure crystals of n-Si the experimenta

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::a25705ac1cb175dcf8e977e4b0408773
https://doi.org/10.1002/pssa.2210210204

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Temperature dependence of the Hall factor in n–Si in the range of lattice, impurity, and mixed scattering mechanisms

Autor: V. S. Lutsyak, I. G. Kirnas, P. M. Kurilo, P. G. Litovchenko, N. N. Dmitrenko, V. M. Nitsovich

Publikováno v: Physica Status Solidi (a). 26:K45-K48

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::d09fa9a7877c3ad8194a0f1a64543608
https://doi.org/10.1002/pssa.2210260151

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Charge Carrier Scattering on Neutral Centres in n-Si

Autor: N. N. Dmitrenko, V. M. Nitsovich, P. G. Litovchenko, P. M. Kurilo, V. S. Lutsyak

Publikováno v: physica status solidi (b). 97:469-473

A discussion of the basic models for the calculation of the relaxation time for scattering on neutral impurities is given. A comparison is made between the experimental results of scattering of electrons on neutral oxygen atoms in n-Si and the theore

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::31f3fd613ca7d4eaff1747d687af4b91
https://doi.org/10.1002/pssb.2220970211

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Determination of the current-carrier concentration from the impedance of a semiconductor disk in a strong magnetic field

Autor: P. M. Kurilo

Publikováno v: Journal of Applied Mechanics and Technical Physics. 8:37-37

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::7ff803fb8d5234883cb5ba11cd850427
https://doi.org/10.1007/bf00914459

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