Zobrazeno 1 - 10
of 28
pro vyhledávání: '"P. M. Garber"'
Publikováno v:
Geochemistry, Geophysics, Geosystems, Vol 25, Iss 7, Pp n/a-n/a (2024)
Abstract Zircon grains from the metasedimentary lower crust of the Rio Grande Rift, New Mexico, preserve a metamorphic record of the transition from Laramide compression to Eocene extension. Zircon U‐Pb isotopes and trace‐element concentrations f
Externí odkaz:
https://doaj.org/article/4f97f979237640b683dc59c0acdc7e35
Publikováno v:
Geochemistry, Geophysics, Geosystems, Vol 25, Iss 2, Pp n/a-n/a (2024)
Abstract Phosphorites can record oceanic conditions during their deposition, but the faithful retention of primary information in Paleoproterozoic deposits can be mitigated by post‐depositional processes. Here, we examine a peritidal phosphorite wi
Externí odkaz:
https://doaj.org/article/d4011e05ec6946099d2e9e34a29797c3
Autor:
Bibi Zhou, Jolene M. Garber, Jiri Vlach, Parastoo Azadi, Kenneth K. S. Ng, Jorge C. Escalante-Semerena, Christine M. Szymanski
Publikováno v:
mBio, Vol 14, Iss 6 (2023)
ABSTRACTCampylobacter jejuni is a leading cause of bacterial diarrhea worldwide, and infection in infants is associated with growth stunting in low- and middle-income countries. Approximately half of all C. jejuni isolates are asaccharolytic, while t
Externí odkaz:
https://doaj.org/article/b1c59fbac6ef45c0842a99eb61b77aa0
Autor:
Sonja Aulbach, Malcolm Massuyeau, Joshua M. Garber, Axel Gerdes, Larry M. Heaman, K.S. Viljoen
Publikováno v:
Geochemistry, Geophysics, Geosystems, Vol 21, Iss 5, Pp n/a-n/a (2020)
Abstract The mineralogy, chemical composition, and physical properties of cratonic mantle eclogites with oceanic crustal protoliths can be modified by secondary processes involving interaction with fluids and melts, generated in various slab litholog
Externí odkaz:
https://doaj.org/article/6fffd60514a047a0a7458e09d86cc6b8
Autor:
Xiaoming Bian, Jolene M. Garber, Kerry K. Cooper, Steven Huynh, Jennifer Jones, Michael K. Mills, Daniel Rafala, Dilruba Nasrin, Karen L. Kotloff, Craig T. Parker, Sharon M. Tennant, William G. Miller, Christine M. Szymanski
Publikováno v:
mSphere, Vol 5, Iss 1 (2020)
ABSTRACT Campylobacter jejuni is a leading cause of bacterial diarrhea worldwide and is associated with high rates of mortality and growth stunting in children inhabiting low- to middle-resource countries. To better understand the impact of breastfee
Externí odkaz:
https://doaj.org/article/4b36dc2e6c2e41a29f5aff605ab1c0f4
Autor:
Alan M. Garber
Publikováno v:
Harvard Data Science Review (2019)
Externí odkaz:
https://doaj.org/article/1fc432259b08409c90aec2b302dcba86
Autor:
John P A Ioannidis, Alan M Garber
Publikováno v:
PLoS Medicine, Vol 8, Iss 7, p e1001058 (2011)
Externí odkaz:
https://doaj.org/article/3589721c6314427c83eb08dc5868889c
Autor:
J. D. Brown, D. S. Green, Shawn R. Gibb, Jeffrey B. Shealy, M. J. Poulton, W. K. Leverich, Ramakrishna Vetury, D. K. Choi, P. M. Garber
Publikováno v:
2006 IEEE Annual Wireless and Microwave Technology Conference.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::24a6a786d8f07208f50ef99bb3370c6d
https://doi.org/10.1109/wamicon.2006.351919
https://doi.org/10.1109/wamicon.2006.351919
Autor:
Jeffrey B. Shealy, Ramakrishna Vetury, P. M. Garber, W. Kuang, Griff L. Bilbro, M. J. Poulton, H. Yin, Robert J. Trew, Y. Liu
Publikováno v:
2006 IEEE MTT-S International Microwave Symposium Digest.
HFET's fabricated from nitride-based wide bandgap semiconductors can produce RF output power greater than an order of magnitude compared to devices fabricated from traditional semiconductors such as GaAs and InP. Nitride-based HFET's can support drai
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8dd38a959a23e3b1122359a5f438adca
https://doi.org/10.1109/mwsym.2006.249696
https://doi.org/10.1109/mwsym.2006.249696
Autor:
Shawn R. Gibb, R. Vetury, Jeffrey B. Shealy, M. J. Poulton, D. S. Green, J. McKenna, J. D. Brown, K. Leverich, P. M. Garber
Publikováno v:
2006 IEEE MTT-S International Microwave Symposium Digest.
AlGaN/GaN HEMTs on SiC have been fabricated with dual and single gate device geometries. Subthreshold characteristics and drain bias dependence of large signal parameters were compared to identify differences in electric field. Degradation under RF s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f9119766562c75de1cfb1f6fea8e41bd
https://doi.org/10.1109/mwsym.2006.249733
https://doi.org/10.1109/mwsym.2006.249733