Zobrazeno 1 - 10
of 39
pro vyhledávání: '"P. M. Fauchet"'
Publikováno v:
AIP Advances, Vol 7, Iss 7, Pp 075004-075004-11 (2017)
Plasmonic nanoparticles have unique optical properties and these properties are affected by any surrounding structures, or lack thereof. Nanoparticles are often added to a device without fully assessing the effect that each interface will have on the
Externí odkaz:
https://doaj.org/article/c7db4b453b1f4bec8d69c5981eeff302
Autor:
John S. Preston, Frank A. Hegmann, Robert A. Hughes, Marc Currie, S.H. Moffat, Roman Sobolewski, P. M. Fauchet, T.Y. Hsiang, M. Lindgren, C. Williams
Publikováno v:
IEEE Journal of Selected Topics in Quantum Electronics. 2:668-678
We report our femtosecond time-resolved measurements of the photoresponse of microbridges in YBa/sub 2/Cu/sub 3/O/sub 7-x/ (YBCO) thin films, performed using an electrooptic sampling technique. Our test structures consisted of 5-/spl mu/m-wide, 7-/sp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a8eca965fe4d8e5f24b6c090649a1e3c
https://doi.org/10.1109/2944.571767
https://doi.org/10.1109/2944.571767
Autor:
P. M. Fauchet
Publikováno v:
IEEE Photonics Conference 2012.
Plasmonic nanostructures can increase photon capture and lead to enhancement of photocurrent in photovoltaic (PV) cells. This has special implications for Si absorber layers much thinner than 10 µm, when optical absorption of near-bandgap light is r
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ed3f1b60efaf95a30f25b375dafdb619
https://doi.org/10.1109/ipcon.2012.6358556
https://doi.org/10.1109/ipcon.2012.6358556
Publikováno v:
Applied Physics Letters. 74:711-713
The hot electron relaxation time is studied in an n-type GaN film grown by molecular beam epitaxy on sapphire. A femtosecond pump–probe technique is used in which the electrons are excited by an infrared pump and the carrier dynamics are monitored
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::11e9cb56ab4d74a8aca0610929e6f5ab
https://doi.org/10.1063/1.122995
https://doi.org/10.1063/1.122995
Autor:
Robert A. Hughes, C.‐C. Wang, P. M. Fauchet, T. Y. Hsiang, D. Jacobs-Perkins, Frank A. Hegmann, John S. Preston, Roman Sobolewski, Marc Currie, S.H. Moffat
Publikováno v:
Applied Physics Letters. 67:285-287
Photoresponse signals with widths as short as 1.5 ps are observed from epitaxial YBa2Cu3O7−δ thin films using electro‐optic sampling techniques. Voltage transients less than 2 ps wide are seen in 100‐ and 200‐nm films exposed to 150‐fs las
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8f466e2de22e32dbeb7ce15577fb16cf
https://doi.org/10.1063/1.114784
https://doi.org/10.1063/1.114784
Publikováno v:
Quantum Optoelectronics.
The photoluminescence (PL) in crystalline silicon (c-Si) has been investigated during the last decades. Interest has focused on the visible PL that is observed in Si nanoclusters and in porous Si (PSi), the infrared PL in silicon-germanium superlatti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f3aa688f326cfd642b0e176925133bd5
https://doi.org/10.1364/qo.1997.qfc.4
https://doi.org/10.1364/qo.1997.qfc.4
Publikováno v:
Chemistry and Physics of Small-Scale Structures.
The photoluminescence (PL) in crystalline silicon (c-Si) has been investigated during the last decades. Recent interest has focused on the visible PL that is observed in Si nanoclusters and in porous Si (PSi), the infrared PL in silicon-germanium sup
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6666ba0407215fc046747a050171f254
https://doi.org/10.1364/cps.1997.ctub.6
https://doi.org/10.1364/cps.1997.ctub.6
Publikováno v:
Ultrafast Phenomena.
We report the first direct measurement of the relaxation time of holes in p-type quantum wells using femtosecond mid-infrared laser pulses tuned on resonance with the intersubband transition energy. In the early experiments, we used the Stanford free
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::58420763eb9456afee12a942f752f42f
https://doi.org/10.1364/up.1996.tue.36
https://doi.org/10.1364/up.1996.tue.36
Publikováno v:
Hot Carriers in Semiconductors ISBN: 9781461380351
Relaxation times ranging from 1 to 10 ps have been measured with infrared bleaching techniques in n-type quantum wells (QWs) when the inter-subband transition energy is larger than the LO-phonon energy.1–3 These relaxation times have been attribute
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bfca5779bf911948dbf627839fdadd9e
https://doi.org/10.1007/978-1-4613-0401-2_15
https://doi.org/10.1007/978-1-4613-0401-2_15
Publikováno v:
Ultrafast Electronics and Optoelectronics.
The mechanism of intersubband relaxation in quantum wells (QWs) is very important from a fundamental physics perspective and for device applications. Measurements performed by infrared bleaching [1-3] and anti-Stokes Raman scattering [4] techniques i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6832ff8d11debcc77fa260b447fc7d5b
https://doi.org/10.1364/ueo.1995.umb5
https://doi.org/10.1364/ueo.1995.umb5