Zobrazeno 1 - 10 of 61 pro vyhledávání: '"P. M. Bridenbaugh"'
1
The crystal structure of the high-temperature polymorph of α–hexathienyl (α–6T/HT)
Autor: Andrew J. Lovinger, Theo Siegrist, Robert C. Haddon, D.D. Davis, Robert A. Laudise, P. M. Bridenbaugh, R. M. Fleming, Howard E. Katz
Publikováno v: Journal of Materials Research. 10:2170-2173
α-hexathienyl (α–6T) is a highly promising material for application in thin film transistor devices. Recently, record high mobilities, together with record high current on/off ratios, have been reported.1 Thus far, structural information on this
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::8d73022718caf36016bb9d5acb74e715
https://doi.org/10.1557/jmr.1995.2170
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2
The dynamic gradient freeze growth of (Ti + Zn) doped semi-insulating InP
Autor: R. L. Barns, H. Brown, P. M. Bridenbaugh, A. Carter, E. M. Monberg
Publikováno v: Materials Science and Engineering: B. 6:29-32
High quality single crystals of semi-insulating InP were grown by the electrodynamic gradient freeze technique. The material is co-doped with the shallow acceptor zinc and the deep donor titanium. Resistivities in the 105−106 Ω cm range were measu
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::9d0771df929556a5dd923b224e4d6133
https://doi.org/10.1016/0921-5107(90)90110-w
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3
Carbon‐doped impurity induced layer disorder 0.98 μm lasers
Autor: R. Bylsma, P. M. Thomas, Moses T. Asom, W. S. Hobson, D. D. Roccasecca, S. J. Pearton, M. Geva, M. A. Washington, John Lopata, P. M. Bridenbaugh, D. P. Wilt, G. J. Zydzik
Publikováno v: Journal of Applied Physics. 76:590-592
We have fabricated high power carbon‐doped InGaAs/AlGaAs lasers using an impurity‐induced layer disordering process to define the active region. The advantage of carbon doping is that it exhibits significantly lower diffusivity compared to other
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::3ecec47a7d9751c0e3e03d1d92d8f68c
https://doi.org/10.1063/1.357048
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4
Band structures of organic thin-film transistor materials
Autor: R. M. Fleming, Theo Siegrist, Robert C. Haddon, Robert A. Laudise, P. M. Bridenbaugh
Publikováno v: Journal of Materials Chemistry. 5:1719
We report extended Huckel theory (EHT) band structure calculations for the high-temperature polymorph of α-6T (α-sexithiophene) and C60, two organic materials that have shown promising device characteristics, as the active element in thin-film tran
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::a06142ae7f5f82bf54fdd5d848286b49
https://doi.org/10.1039/jm9950501719
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5
A comparison of CdTe grown on GaAs by molecular beam and organometallic vapor phase epitaxy
Autor: D. W. Kisker, R. D. Feldman, R. F. Austin, K. S. Jeffers, P. M. Bridenbaugh
Publikováno v: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 4:2234-2238
CdTe has been grown on (100)GaAs by molecular beam epitaxy (MBE), organometallic vapor phase epitaxy (OMVPE), and photoassisted OMVPE (POMVPE). Optimum conditions for OMVPE are governed by the thermodynamics of the Cd–Te system. The conditions for
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::c2adcc91291b0560a4e675dace1dcac0
https://doi.org/10.1116/1.574061
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6
Microscopic origin of the companionA1Raman line in glassy Ge(S,Se)2
Autor: P. M. Bridenbaugh, James C. Phillips, J. P. Remeika, J. E. Griffiths, G. P. Espinosa
Publikováno v: Physical Review B. 20:4140-4144
A solution to the long-standing problem of the companion ${A}_{1}$ Raman line [symmetric breathing mode of Ge${(\mathrm{S},\mathrm{S}\mathrm{e})}_{4}$ tetrahedra] in Ge${(\mathrm{S},\mathrm{S}\mathrm{e})}_{2}$ glasses is proposed based on the observa
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::749d3c25c955252e04d9e0c9298d807f
https://doi.org/10.1103/physrevb.20.4140
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7
Multicomponent tetrahedral compounds for solar cells
Autor: Sigurd Wagner, P. M. Bridenbaugh
Publikováno v: Journal of Crystal Growth. 39:151-159
Preparation and properties are reviewed of solar cells based on multicomponent compounds. Cells made with CuInSe 2 , CuInS 2 , and CuGaSe 2 are discussed in detail. New results are presented on single crystal p - CuInS 2 / n - CdS and p - Cu 2 CdSnS
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::13229a5981f682888bae2f9b7544df39
https://doi.org/10.1016/0022-0248(77)90162-2
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9
The growth of low dislocation densityp-lnP single crystals
Autor: H. Brown, P. M. Bridenbaugh, R. L. Barns, E. M. Monberg
Publikováno v: Journal of Electronic Materials. 18:549-552
High qualityp-type InP is critical for devices ranging from high power injection lasers to space-based solar cells. The growth of 50 mm diameter, low defect density,p-type, Zn:InP substrates has been achieved for the first time at doping levels below
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::7ca383620199f13885ed28c30e520c0b
https://doi.org/10.1007/bf02657787
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10
Photovoltaic properties and junction formation in CuInSe2
Autor: P. M. Bridenbaugh, B. Tell
Publikováno v: Journal of Applied Physics. 48:2477-2480
Studies of diffusion and photovoltaic effects in CuInSe2 p‐n junctions are reported. Junctions were formed by annealing Zn‐, Cd‐, and Cu‐plated p‐type samples at temperatures from 200 to 450 °C. The most efficient photodetectors are formed
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::41eb7039169b754e0a02aa0e48d8ca34
https://doi.org/10.1063/1.324012
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