Zobrazeno 1 - 3
of 3
pro vyhledávání: '"P. M. Batev"'
Publikováno v:
International Journal of Electronics. 48:511-517
Molybdenum layers are deposited on GaAs by MoCl6 reaction with H2. During the deposition the GaAs substrates are heated to 400°C. The forward current of prepared Mo-(n)GaAs structure increases over five decades in accordance with the relation J=J0 e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eb4a163fd1d8d37ff7c24403feb3e4c5
https://doi.org/10.1080/00207218008901133
https://doi.org/10.1080/00207218008901133
Publikováno v:
Physica Status Solidi (a). 45:671-675
Tungsten is deposited on GaAs by WCl6 reaction with H2. The GaAs substrate is heated to 400 °C during the deposition. The forward current of W-n-GaAs structures prepared in such way increases exponentially over five decades in accordance with the th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c14ffda6396b72018702f8bdd83f73c2
https://doi.org/10.1002/pssa.2210450241
https://doi.org/10.1002/pssa.2210450241
