Zobrazeno 1 - 7
of 7
pro vyhledávání: '"P. M. Batev"'
Publikováno v:
International Journal of Electronics. 48:511-517
Molybdenum layers are deposited on GaAs by MoCl6 reaction with H2. During the deposition the GaAs substrates are heated to 400°C. The forward current of prepared Mo-(n)GaAs structure increases over five decades in accordance with the relation J=J0 e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eb4a163fd1d8d37ff7c24403feb3e4c5
https://doi.org/10.1080/00207218008901133
https://doi.org/10.1080/00207218008901133
Publikováno v:
Physica Status Solidi (a). 45:671-675
Tungsten is deposited on GaAs by WCl6 reaction with H2. The GaAs substrate is heated to 400 °C during the deposition. The forward current of W-n-GaAs structures prepared in such way increases exponentially over five decades in accordance with the th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c14ffda6396b72018702f8bdd83f73c2
https://doi.org/10.1002/pssa.2210450241
https://doi.org/10.1002/pssa.2210450241
Autor:
Hepplestone, S. P., Sushko, P. V.
Publikováno v:
Journal of Applied Physics; 2014, Vol. 116 Issue 19, p193703-1-193703-5, 5p, 3 Diagrams
Publikováno v:
IEEE Electron Device Letters; 1988, Vol. 9 Issue 6, p315-316, 2p
Autor:
Carl Wilmsen
The application of the 111-V compound semiconductors to device fabrica tion has grown considerably in the last few years. This process has been stimulated, in part, by the advancement in the understanding of the interface physics and chemistry of t
