Zobrazeno 1 - 10
of 39
pro vyhledávání: '"P. L. Trouilloud"'
Publikováno v:
AIP Advances, Vol 9, Iss 1, Pp 015002-015002-6 (2019)
Barrier interface condition is critical for spin-polarized tunneling and spin-transfer torque switching in CoFeB∣MgO∣CoFeB-based magnetic tunnel junctions. The differential tunnel conductance gV contains information on CoFeB’s magnetic properti
Externí odkaz:
https://doaj.org/article/64c2a5127d86494b8c7932b21529d23c
Autor:
G. Hu, C. Safranski, J. Z. Sun, P. Hashemi, S. L. Brown, J. Bruley, L. Buzi, C. P. D'Emic, E. Galligan, M. G. Gottwald, O. Gunawan, J. Lee, S. Karimeddiny, P. L. Trouilloud, D. C. Worledge
Publikováno v:
2022 International Electron Devices Meeting (IEDM).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e6436168d7a3f387d76e47182722b1aa
https://doi.org/10.1109/iedm45625.2022.10019402
https://doi.org/10.1109/iedm45625.2022.10019402
Autor:
D. C. Worledge, C. Safranski, G. Hu, J. Z. Sun, P. Hashemi, S. L. Brown, L. Buzi, C. P. D'Emic, M. G. Gottwald, O. Gunawan, H. Jung, S. Karimeddiny, J. Kim, P. L. Trouilloud
Publikováno v:
2022 IEEE 33rd Magnetic Recording Conference (TMRC).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f7e0105281b63c8529862d42506644fa
https://doi.org/10.1109/tmrc56419.2022.9918607
https://doi.org/10.1109/tmrc56419.2022.9918607
Autor:
C. Safranski, G. Hu, J. Z. Sun, P. Hashemi, S. L. Brown, L. Buzi, C. P. D'Emic, E. R. J. Edwards, E. Galligan, M. G. Gottwald, O. Gunawan, S. Karimeddiny, H. Jung, J. Kim, K. Latzko, P. L. Trouilloud, S. Zare, D. C. Worledge
Publikováno v:
2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5f031dfcb76a11da30c1ae58d7e40861
https://doi.org/10.1109/vlsitechnologyandcir46769.2022.9830306
https://doi.org/10.1109/vlsitechnologyandcir46769.2022.9830306
Autor:
G. Hu, G. Lauer, J. Z. Sun, P. Hashemi, C. Safranski, S. L. Brown, L. Buzi, E. R. J. Edwards, C. P. D'Emic, E. Galligan, M. G. Gottwald, O. Gunawan, H. Jung, J. Kim, K. Latzko, J. J. Nowak, P. L. Trouilloud, S. Zare, D. C. Worledge
Publikováno v:
2021 IEEE International Electron Devices Meeting (IEDM).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c8d2744883bf60d4284ab3d5976e9553
https://doi.org/10.1109/iedm19574.2021.9720691
https://doi.org/10.1109/iedm19574.2021.9720691
Autor:
Michael F. Lofaro, Anthony J. Annunziata, Daniel C. Edelstein, Michael C. Gaidis, Dirk Pfeiffer, Adam M. Pyzna, Eugene J. O'Sullivan, Nathan P. Marchack, Eric A. Joseph, Yu Zhu, Armand Galan, P. L. Trouilloud, Jemima Gonsalves, S. Holmes
Publikováno v:
ECS Transactions. 69:127-137
Recent developments in new switching methods, such as spin transfer torque and temperature-assisted switching (TAS), have greatly increased interest in MRAM. However, MRAM fabrication is challenging due to the lack of magnetic materials processing ex
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8fc2df02d639dbf704f6dd6c94b16f83
https://doi.org/10.1149/06903.0127ecst
https://doi.org/10.1149/06903.0127ecst
Autor:
C. Kothandaraman, E. J. O'Sullivan, J. Harms, Yohan Kim, S. Brown, P. L. Trouilloud, Anthony J. Annunziata, W. Chen, J. Z. Sun, Y. Zhu, Nathan P. Marchack, S. Murthy, J.H. Park, R. P. Robertazzi, D. C. Worledge, G. Hu, J. H. Lee, G. Lauer, M. Reuter, Janusz J. Nowak
Publikováno v:
VLSI-DAT
To achieve low write current in high density Spin Transfer Torque Magnetic Random Access Memory (STT-MRAM) arrays, it is important to understand and co-optimize the different kinds of device switching currents, governed by different materials paramet
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::90ed0003d41cfd237ea02d2fc6f76517
https://doi.org/10.1109/vlsi-tsa.2017.7942445
https://doi.org/10.1109/vlsi-tsa.2017.7942445
Autor:
E. J. O'Sullivan, C Camagong, J. J. Nowak, M Hopstaken, E. A. Galligan, P. L. Trouilloud, R. Kothandaraman, Y. Luo, M. Krishnan
Publikováno v:
ECS Meeting Abstracts. :916-916
After some early successes with electroless Cu for printed circuit board wiring (1), and the use of electroless Co-based magnetic films over non-magnetic electroless nickel films on rigid Al disks in the magnetic storage industry, for several years,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::df51fe2aa471a3f8029fe3c0f09ebe74
https://doi.org/10.1149/ma2019-02/15/916
https://doi.org/10.1149/ma2019-02/15/916
Autor:
M. Gajek, Eugene J. O'Sullivan, R. P. Robertazzi, Guohan Hu, Jonathan Z. Sun, D. W. Abraham, Daniel C. Worledge, Janusz J. Nowak, Michael C. Gaidis, Stephen L. Brown, P. L. Trouilloud, William J. Gallagher
Publikováno v:
ECS Transactions. 58:117-125
Spin-torque Magnetoresistive Random Access Memory (ST-MRAM) is the subject of intense investigation since it extends MRAM technology to densities beyond those achieved with the earlier field-switched MRAM technology. This paper reviews recent develop
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fbc85c67d0c389200aff348075a2198d
https://doi.org/10.1149/05805.0117ecst
https://doi.org/10.1149/05805.0117ecst
Autor:
Y. Zhu, D. C. Worledge, Anthony J. Annunziata, J. Z. Sun, J. Harms, G. Lauer, Janusz J. Nowak, R. P. Robertazzi, S. Brown, W. Chen, M. Reuter, Nathan P. Marchack, E. J. O'Sullivan, P. L. Trouilloud, G. Hu, J.H. Park, J. H. Lee, Luqiao Liu, S. Murthy, Yohan Kim
Publikováno v:
2015 IEEE International Electron Devices Meeting (IEDM).
We report switching performance of perpendicularly magnetized Spin-Transfer Torque MRAM (STT-MRAM) devices with double tunnel barriers and two reference layers. We show that stacks with double tunnel barriers improve the switching efficiency (Eb/Ic0)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::57482fab00e1498130308915139f1145
https://doi.org/10.1109/iedm.2015.7409772
https://doi.org/10.1109/iedm.2015.7409772