Zobrazeno 1 - 10
of 24
pro vyhledávání: '"P. Krewniak"'
Publikováno v:
Vacuum. 82:1137-1140
Phase diagrams have been studied to describe the RF PECVD process for intrinsic-hydrogenated silicon Si:H and silicon–low germanium alloy a-Si 1− x Ge x :H thin films using textured Al substrates that have been overdeposited with n-type amorphous
Publikováno v:
2009 34th IEEE Photovoltaic Specialists Conference (PVSC).
The investigation samples of amorphous / microcrystalline silicon and silicon-germanium cells were made at low and high pressure as well as in graded H2, SiH4, GeH4 flows and various plasma power conditions by RF PECVD on a glass and also on a foil a
Publikováno v:
2008 33rd IEEE Photovolatic Specialists Conference.
The investigation of top amorphous cells in four-terminal configuration with bottom polycrystalline silicon cell was carried out. The top structures were made at low pressure as well as in multistep hydrogen conditions by Capacitatively Coupled Radio
Publikováno v:
MRS Proceedings. 715
In general terms this paper analyzes effectiveness of ZnO/p+/i a-Si:H/n+/Al solar cells made on commercial glass substrate with double-sided antireflection coatings. The primary topic, however, is the ZnO/p+/i a-Si:H junction based on layers obtained
Publikováno v:
SPIE Proceedings.
In this paper we present some of the newest solutions of the direct and the indirect methods of x-ray and (gamma) -ray detection applicable in medicine. We mainly describe technological postulations and several properties of linear and 2D x-ray and (
Publikováno v:
Optoelectronic and Electronic Sensors II.
In this work the application of a-Si:H thin film transistor technology in the field of chemical sensors is presented. In particularly, the optimization of magnetron deposition process for obtaining various silicon nitride films and TFT structures are
Autor:
P. Krewniak, A. Kolodziej
Publikováno v:
Scopus-Elsevier
The paper reports radiation damage experiments which influence properties of image sensors using pin photodiodes and thin film transistors. The effect of 60Co radiation at about 1.2MeV on the noise and drain-source current characteristics of hydrogen
Publikováno v:
Scopus-Elsevier
This paper reports technological experiments which have strongly affected the properties of the multilayer image sensor structure. The high deposition rate and large hydrogen content during the reactive magnetron deposition process causes nanocrystal
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Akademický článek
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