Zobrazeno 1 - 10
of 27
pro vyhledávání: '"P. Kopalidis"'
Autor:
Tabata, Toshiyuki, Karim, Huet, Rozé, Fabien, Mazzamuto, Fulvio, Sermage, Bernard, Kopalidis, Petros, Roh, Dwight
Publikováno v:
ECS J. Solid State Sci. Technol. 10 (2021) 023005
Explosive crystallization (EC) is often observed when using nanosecond-pulsed melt laser annealing (MLA) in amorphous silicon (Si) and germanium (Ge). The solidification velocity in EC is so fast that a diffusion-less crystallization can be expected.
Externí odkaz:
http://arxiv.org/abs/2106.00946
Publikováno v:
Information, Vol 15, Iss 3, p 135 (2024)
Recent technological developments have enabled computers to identify and categorize facial expressions to determine a person’s emotional state in an image or a video. This process, called “Facial Expression Recognition (FER)”, has become one of
Externí odkaz:
https://doaj.org/article/709d28ce7c504f02b063b3f089d5dbea
Publikováno v:
2000 International Conference on Ion Implantation Technology Proceedings. Ion Implantation Technology - 2000 (Cat. No.00EX432).
An enhanced xenon plasma electron flood gun (PEF-Xe) used in a GSD-200E/sup 2/ ion implanter is characterized by means of various wafer test structures. High dose/beam current implants are performed under different PEF settings to investigate the cha
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6b26d033a0578b3ad0a95cafda53a0df
https://doi.org/10.1109/iit.2000.924212
https://doi.org/10.1109/iit.2000.924212
Publikováno v:
1998 International Conference on Ion Implantation Technology. Proceedings (Cat. No.98EX144).
As the common metal contaminants requirements in ion implanters approach the /spl les/E10 cm/sup 2/ range, the selection of proper material for critical beam strike areas has become a major factor in the design of new assemblies and new systems. The
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f7b558b5a8ced7d6c3301ec13b64c9fa
https://doi.org/10.1109/iit.1999.812181
https://doi.org/10.1109/iit.1999.812181
Publikováno v:
Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on.
Heavy ions such as indium and antimony are increasingly being used for high tilt angle halo implants needed for control of short channel effects in advanced CMOS devices. Precise angular control of these implants is required, especially when masking
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c6dc834a445946bd09d5c34b445df9c8
https://doi.org/10.1109/iit.2002.1257993
https://doi.org/10.1109/iit.2002.1257993
Publikováno v:
Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on.
Low energy arsenic implants used in the formation of ultra-shallow junctions are characterized on the GSD/Ultra high current ion implanter. Significant advantages in beam current and process throughput are demonstrated by using the Arsenic dimer ion
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d308139e6fd0e5887740e38187226868
https://doi.org/10.1109/iit.2002.1257954
https://doi.org/10.1109/iit.2002.1257954
Publikováno v:
Ion Implantation Technology. 2002. Proceedings of the 14th International Conference on.
The process performance of a reduced area disk with a variable strike plate faraday to control cross contamination and auto-doping in multi-wafer high current ion implanters is reported. The Virtual Slot Disk (VSD)/Triple Surface Disk Faraday (TSDF)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::76d6cc1fa154c6a1edc35dcbffbdfefa
https://doi.org/10.1109/iit.2002.1258035
https://doi.org/10.1109/iit.2002.1258035
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