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Publikováno v:
MRS Proceedings. 98
A large area (2.8 cm2) electron beam source has been developed, characterized, and applied to anisotropic etching of SiO2 masked with photoresist. This beam operates at high pressures (up to 100 mTorr), in reactive gases, and at more than 10 mA/cm2.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::abb304e8d2c1eb206a3f40ee9931e2d2
https://doi.org/10.1557/proc-98-223
https://doi.org/10.1557/proc-98-223
