Zobrazeno 1 - 10
of 44
pro vyhledávání: '"P. K. Kandaswamy"'
Autor:
Corina-Marcela Rus, Thomas Weissensteiner, Catarina Pereira, Iuliana Susnea, Bright D. Danquah, Galina Morales Torres, Maria Eugenia Rocha, Claudia Cozma, Deepa Saravanakumar, Sumanth Mannepalli, Krishna K. Kandaswamy, Sebastiano Di Bucchianico, Ralf Zimmermann, Arndt Rolfs, Peter Bauer, Christian Beetz
Publikováno v:
Orphanet Journal of Rare Diseases, Vol 17, Iss 1, Pp 1-12 (2022)
Abstract Background Ceroid lipofuscinoses neuronal 6 (CLN6) disease belongs to the neuronal ceroid lipofuscinoses (NCLs), complex and genetically heterogeneous disorders with wide geographical and phenotypic variation. The first clinical signs usuall
Externí odkaz:
https://doaj.org/article/ded9990fd9204f9b870ff9a0bb3a6b4f
Autor:
Christian Beetz, Volha Skrahina, Toni M. Förster, Hanaa Gaber, Jefri J. Paul, Filipa Curado, Arndt Rolfs, Peter Bauer, Stephan Schäfer, Volkmar Weckesser, Vivi Lieu, Mandy Radefeldt, Claudia Pöppel, Susann Krake, Krishna K. Kandaswamy, Katja Bruesehafer, Florian Vogel
Publikováno v:
Diagnostics, Vol 10, Iss 7, p 464 (2020)
The Coronavirus disease 2019 (COVID-19) pandemic caused by the Severe Acute Respiratory Syndrome Coronavirus-2 (SARS-CoV-2) has resulted in economic and social lockdowns in most countries all over the globe. Early identification of infected individua
Externí odkaz:
https://doaj.org/article/fe5f923659d9431fa832605881659b52
Autor:
Evi Vranken, D. Vanhaeren, Rafael Venegas, Paola Favia, Hu Liang, Ming Zhao, P. K. Kandaswamy, Stefaan Decoutere, Robert Langer, Marleen Van Hove, Annelies Vanderheyden, Yoga Saripalli
Publikováno v:
physica status solidi c. 13:311-316
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c7df2d8eb8815bb2f6c64a5a9e9153f2
https://doi.org/10.1002/pssc.201510280
https://doi.org/10.1002/pssc.201510280
Autor:
Burcu Ozden, Ming Zhao, P. K. Kandaswamy, Hu Liang, Yoga Saripalli, Min P. Khanal, Kosala Yapabandara, Vahid Mirkhani, Minseo Park, Suhyeon Youn
Publikováno v:
ECS Journal of Solid State Science and Technology. 5:P3206-P3210
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::08c9d1fdebc0c7194497b4f45ea944c0
https://doi.org/10.1149/2.0281604jss
https://doi.org/10.1149/2.0281604jss
Autor:
Hiwa Modarresi, Hugo Bender, Hara Lenka, André Vantomme, Wilfried Vandervorst, Johan Meersschaut, P. K. Kandaswamy
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 331:69-73
Rutherford backscattering and channeling spectrometry (RBS/C) as well as transmission electron microscopy (TEM) are used to characterize the crystalline structure of a GaN layer grown on a Si (1 1 1) substrate. The channeling measurements are perform
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::81b491e1d7722591ae3ce283f8f56531
https://doi.org/10.1016/j.nimb.2014.02.014
https://doi.org/10.1016/j.nimb.2014.02.014
AlN/AlGaN/GaN buffer optimization on silicon (111): bow and crystal quality control for Si‐CMOS fabs
Autor:
Brecht DeVos, P. K. Kandaswamy, Marleen Van Hove, Ming Zhao, Eric Carlson, Olivier Richard, Barun Dutta, S.B. Thapa, Hu Liang, E. Vancoille, Saripalli Yoga
Publikováno v:
physica status solidi c. 11:450-453
In GaN-on-silicon there are many challenges which are currently encountered when making this technology compatible with standard Si-CMOS fabs especially the bow. Bringing this technology to CMOS fabs can potentially drive the costs down, in addition
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::62ee8ad0a3fc2989578c81d39cb3d40a
https://doi.org/10.1002/pssc.201300524
https://doi.org/10.1002/pssc.201300524
Autor:
Hugo Bender, Yoga Saripalli, S.B. Thapa, P. K. Kandaswamy, Olivier Richard, Hu Liang, Ming Zhao, Eric Carlson, Paola Favia, E. Vancoille
Publikováno v:
physica status solidi c. 11:533-536
V-defects can be very detrimental to the functionality of GaN based light emitting diodes (LEDs) and high power transistors grown on 200 mm Si (111) substrates. This work focuses on reducing these detrimental defects in the GaN/AlGaN/AlN stacks grown
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::70339e892175bd880c7b2dc28cb6c8c5
https://doi.org/10.1002/pssc.201300555
https://doi.org/10.1002/pssc.201300555
Autor:
Andrea Firrincieli, P. K. Kandaswamy, Ming Zhao, Stefaan Decoutere, Yoga Saripalli, E. Vancoille, Hu Liang
Publikováno v:
physica status solidi c. 11:446-449
AlGaN/GaN/AlGaN double heterojunction high-electron-mobility transistors were grown on 200 mm Si (111) using metalorganic chemical vapor deposition. The Al composition of AlGaN barrier varied from 20 at% to 30 at% and thickness from 10 nm to 20 nm. I
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::59ed2a6f94b6114258cdd3dfce6c94e7
https://doi.org/10.1002/pssc.201300478
https://doi.org/10.1002/pssc.201300478
Autor:
Laurent Nevou, P. K. Kandaswamy, Maria Tchernycheva, F. H. Julien, Eva Monroy, Alon Vardi, Gad Bahir, A. Wirthmüller, Samuel E. Schacham, Juliette Mangeney, H. Macchadani
Publikováno v:
physica status solidi (a). 207:1421-1424
We have investigated intraband absorptions in GaN/AlN QDs for ultrafast all-optical switching applications at telecommunication wavelengths. Using time-resolved pump-probe experiments the electron lifetime in the excited state of the QDs is measured
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f1337de1b174c6077b02ca2769a37156
https://doi.org/10.1002/pssa.200983565
https://doi.org/10.1002/pssa.200983565
Autor:
Eva Monroy, Laurent Nevou, F. H. Julien, Alon Vardi, Maria Tchernycheva, P. K. Kandaswamy, Laurent Vivien, Gad Bahir
Publikováno v:
physica status solidi (b). 247:1622-1627
In this paper we review the recent achievements in terms of GaN/ AlGaN-based intersubband (ISB) physics and devices. We first discuss the design issues and in particular the band bending effect and its influence on the ISB absorption. We then illustr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5cccf9b7fde61193a31a0c760dbae53e
https://doi.org/10.1002/pssb.200983694
https://doi.org/10.1002/pssb.200983694