Výsledky vyhledávání - "P. J. Pearah"

Autor: A. M. Moy, A. C. Chen, K. C. Hsieh, K. Y. Cheng, P. J. Pearah

Publikováno v: Journal of Crystal Growth. 150:293-298

We report on the fabrication of strained separate-confinement heterostructure AlGaInP visible laser diodes with multiple quantum wire active regions formed in situ during gas source molecular beam epitaxy. Lateral composition modulation with a period

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::ee9110c433025bff52dc597ea4db9171
https://doi.org/10.1016/0022-0248(95)80223-y

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AlGaInP multiple quantum wire heterostructure lasers prepared by the strain-induced lateral-layer ordering process

Autor: A. C. Chen, P. J. Pearah, K. C. Hsieh, K. Y. Cheng, A. M. Moy

Publikováno v: IEEE Journal of Quantum Electronics. 30:608-618

We have established an in situ technique, the strain-induced lateral-layer ordering (SILO) process, whereby lateral composition modulation perpendicular to the growth direction occurs spontaneously during growth by gas source molecular beam epitaxy,

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::235f8d22834ababf8b6b6e895e059bf4
https://doi.org/10.1109/3.283809

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Formation of multiple quantum wires by strain-induced lateral-layer ordering process

Autor: A. C. Chen, A. M. Moy, K. C. Hsieh, K. Y. Cheng, P. J. Pearah

Publikováno v: Journal of Crystal Growth. 127:900-903

Quantum wire heterostructures have been grown in situ using gas source molecular beam epitaxy. Lateral composition variation was achieved in the Ga x In 1- x P material system via a strain-induced lateral-layer ordering process occurring spontaneousl

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::ef0e4f03e71759266b86d76703b1712f
https://doi.org/10.1016/0022-0248(93)90756-m

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A study of etch pit density and x-ray rocking curves for GaAs substrate evaluation

Autor: C. E. Kalnas, J. A. Kronwasser, D. L. Farrington, P. J. Pearah, S. M. Crochiere, J. M. Tartaglia

Publikováno v: Journal of Electronic Materials. 20:345-352

The relationship of structural defects to the electrical properties of semiconductor materials is discussed. Etch pit density (EPD) measurements are normally used to evaluate dislocation density. A nondestructive, quantitative method for evaluation o

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::f576b0f51a9df67ad1b1e5e6769b9e90
https://doi.org/10.1007/bf02670882

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Reproducibility studies of lattice matched GaInAsP on (100) InP grown by molecular beam epitaxy using solid phosphorus

Autor: P. J. Pearah, J. N. Baillargeon, K. Y. Cheng, F. A. Thiel, R. Fischer, A.Y. Cho

Publikováno v: Applied Physics Letters. 65:207-209

Growth of lattice matched GaInAsP on (100) InP was achieved using all solid source molecular beam epitaxy (MBE). Two valved cracking cells, one for phosphorus and the other for arsenic, were employed to supply the column V fluxes. The ability to obta

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::d53b2c64dea9693c164b1ea6d9e9f5e5
https://doi.org/10.1063/1.112674

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Growth of silicon and beryllium doped InP by MBE using solid phosphorus

Autor: P. J. Pearah, R.J. Fischer, J. N. Baillargeon, A.Y. Cho, K. Y. Cheng

Publikováno v: Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM).

Most epitaxial growth techniques for InP require PH/sub 3/. Such processes are becoming increasing difficult perform because PH/sub 3/ is highly toxic. Solid phosphorus source MBE offers a less hazardous alternative. This paper describes the properti

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::acd094ae8a19e0647de77e4f48a90e0a
https://doi.org/10.1109/iciprm.1994.328183

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GaxIn1−xP multiple‐quantum‐wire heterostructures prepared by the strain induced lateral layer ordering process

Autor: K. C. Hsieh, A. C. Chen, A. M. Moy, P. J. Pearah, K. Y. Cheng

Publikováno v: Applied Physics Letters. 62:1359-1361

We report the in situ growth of GaxIn1−xP multiple‐quantum‐wire (MQWR) structures by gas source molecular beam epitaxy. The MQWRs were formed through a strain induced lateral layer ordering (SILO) process occurring spontaneously when (GaP)n/(In

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::47f3c20983757cd4b387c1ec8d5604e9
https://doi.org/10.1063/1.108678

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Strained GaxIn1−xP multiple quantum wire light‐emitting diodes: A luminescence polarization study

Autor: P. J. Pearah, K. C. Hsieh, A. M. Moy, A. C. Chen, K. Y. Cheng, E. M. Stellini

Publikováno v: Applied Physics Letters. 62:729-731

Strongly polarized photoluminescence and electroluminescence spectra have been obtained from strained GaxIn1−xP quantum wire heterostructures grown on (100) oriented, on‐axis GaAs substrates by an in situ epitaxial technique. The phenomenon of st

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::948868fd2dca9329bd291c894d827a70
https://doi.org/10.1063/1.108852

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AlGaInP multiple‐quantum‐wire lasers grown by gas source molecular beam epitaxy

Autor: P. J. Pearah, K. C. Hsieh, A. M. Moy, A. C. Chen, K. Y. Cheng, E. M. Stellini

Publikováno v: Applied Physics Letters. 62:458-460

GaxIn1−xP/Al0.15Ga0.35In0.5P graded‐index separate‐confinement heterostructure visible laser structures with multiple quantum wire active regions have been formed in situ during gas source molecular beam epitaxy. No regrowths or ex situ fabrica

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::d730e3142e643ea7c82de3f537b4f80f
https://doi.org/10.1063/1.108932

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