Zobrazeno 1 - 10
of 16
pro vyhledávání: '"P. J. Orders"'
Autor:
F. Grainger, I. K. Varga, G. Shen, P. Capper, P. J. Orders, M. A. Folkard, I. G. Gale, V. Kumar, K. Fueloop, D. Carr, R. H. Hartley, S. Barton, B. A. Johnson, D. Dutton, T. A. Steele
Publikováno v:
Journal of Electronic Materials. 25:1521-1526
We have found phase modulated ellipsometry (PME) to be a sensitive analytical technique capable of providing real time information on composition, epilayer thickness, growth rate, interdiffusion and surface roughness. To fully exploit the benefits of
Autor:
P. J. Orders, I. K. Varga, G. Shen, T. A. Steele, M. A. Folkard, H. Buskes, B. A. Johnson, K. Fueloep, V. Kumar, R. H. Hartley, M. Gal, D. Carr, D. Rees
Publikováno v:
Journal of Electronic Materials. 22:1097-1102
Phase modulated ellipsometric data recorded during molecular beam epitaxial growth of CdTe/HgTe and CdTe/ZnTe superlattices on (100) and (211)B oriented Cd0.96Zn0.04Te and GaAs substrates are presented. The measurements provide a continuous monitor o
Autor:
R. H. Hartley, J. B. Lee, D. Rees, H. Buskes, I. K. Varga, V. Kumar, P. J. Orders, M. A. Folkard, T. A. Steele, D. Carr, G. Shen
Publikováno v:
Journal of Crystal Growth. 117:166-170
Ellipsometry is a sensitive non-destructive analytical technique well suited to the MBE growth process. We report its use in real time to control CdHgTe alloy composition, to control growth of superlattice structures, and to provide a measure of grow
Autor:
P. J. Orders, F. U. Hillebrecht, J.D. Riley, G. Kemister, Lothar Ley, R.C.G. Leckey, Anton P. J. Stampfl, Brian F. Usher
Publikováno v:
Physica Scripta. 41:617-620
Angle resolved photoemission measurements covering the photon range 10.0 to 50.0 eV have been maade on MBE grown In0.27Ga0.73As(100) layers using the Berlin synchrotron radiation source BESSY. The use of a toroidal energy analyser has enabled us to a
Autor:
V. Kumar, M. A. Folkard, D. Carr, I. K. Varga, J. B. Lee, R. H. Hartley, T. A. Steele, H. Buskes, P. J. Orders, D. Rees, G. Shen
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 10:1410
Ellipsometry is a sensitive nondestructive analytical technique well suited to the molecular‐beam epitaxy (MBE) growth process. We report its use in real time to control composition, growth rates, interdiffusion, and growth related surface defects
Publikováno v:
Solid State Communications. 50:315-319
The temperature dependence of X-ray photoelectron diffraction (XPD) affects in azimuthal distributions of Cu 2p 3 2 core level intensities from a clean copper (001) single crystal has been measured in the range from ambient to 1010 K and for polar an
Autor:
P. J. Orders, Charles S. Fadley
Publikováno v:
Physical Review B. 27:781-798
The results of single-scattering cluster (SSC) calculations of normal photoelectron diffraction (NPD) from the S $1s$ level in $c(2\ifmmode\times\else\texttimes\fi{}2)\mathrm{S}$ on Ni(001) are compared with multiple-scattering (MS) calculations by T
Publikováno v:
Journal of Applied Physics. 62:3898-3901
Photoluminescence in strained InxGa1−xAs‐GaAs single heterostructures, grown by molecular‐beam epitaxy, is studied, and the critical layer thickness is determined for a range of In mole fractions. The critical thicknesses are compared with simi
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 2:1333-1338
The polar and azimuthal angular dependences of core‐level x‐ray photoelectron peak intensities from c(2×2)S on Ni(001) are studied in detail in order to determine the accuracy of such measurements for quantitative analyses of such adsorbate/subs
Publikováno v:
Physical Review B. 30:1838-1843