Zobrazeno 1 - 10
of 21
pro vyhledávání: '"P. J. McMarr"'
Publikováno v:
Microelectronic Engineering. 48:143-146
SiO2 films were grown in dry oxygen on Si (100) substrates at various temperatures, then annealed for various times and temperatures. The density of the oxides was found to depend on the growth temperature, and on the anneal time and temperature. The
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d170f2acd7377882c738b0a44b3d89c8
https://doi.org/10.1016/s0167-9317(99)00357-3
https://doi.org/10.1016/s0167-9317(99)00357-3
Publikováno v:
Nanotechnology. 7:434-437
AFM-generated surface modifications are used to fabricate free-standing Si nanostructures. We employ the local electric field of a metal-coated AFM tip which is operated in air to selectively oxidize regions of a H-passivated Si surface. The resultin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::25285c5deead350f72dedd3789ddad96
https://doi.org/10.1088/0957-4484/7/4/024
https://doi.org/10.1088/0957-4484/7/4/024
Publikováno v:
Surface Science. :870-873
We report the fabrication of nanometer-scale Si structures using an atomic force microscope. A conducting AFM tip was used to write nanometer-scale oxide patterns by the local anodic oxidation of a passivated Si(100) surface. These oxide patterns wer
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::93c14492b77f3fd78f7fd3e035d47571
https://doi.org/10.1016/0039-6028(96)00553-5
https://doi.org/10.1016/0039-6028(96)00553-5
Publikováno v:
Solid-State Electronics. 37:583-586
We report the fabrication of nanometer-scale conducting silicon wires by the STM-induced modification of a passivated silicon (100) surface followed by a selective liquid etch. The modified surface layer is a thin oxide a few monolayers thick which a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b24b0f7a6901fea45dda40b4cbda4726
https://doi.org/10.1016/0038-1101(94)90252-6
https://doi.org/10.1016/0038-1101(94)90252-6
Publikováno v:
Applied optics. 18(18)
A general computer program was developed to calculate the reflectivity, transmissivity, and absorptivity of nonideal multilayer structure devices. The program allows for error-based variation in layer thicknesses and also for the formation of interfa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4b6ddf9771d8e698b2a5299272219011
https://pubmed.ncbi.nlm.nih.gov/20212815
https://pubmed.ncbi.nlm.nih.gov/20212815
Publikováno v:
Journal of The Electrochemical Society. 138:1770-1778
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2e85ab48d8378a11bca54a41e367574d
https://doi.org/10.1149/1.2085871
https://doi.org/10.1149/1.2085871
Publikováno v:
Journal of Applied Physics. 67:7211-7222
Si(100) wafers were implanted with O+ at an energy of 180 keV to a dose of 2.3×1018/cm2 in the separation by implanted oxygen process. Following implantation, one wafer was annealed at 1275 °C for 2 h. Spectroscopic ellipsometry measurements were t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8a78fd61edaca7c77cb609c2f97fff23
https://doi.org/10.1063/1.344554
https://doi.org/10.1063/1.344554
Publikováno v:
Physica B: Condensed Matter. 227:315-317
We report the fabrication of nanometer-scale Si structures by using an atomic force microscope to write surface-oxide patterns by the local anodic oxidation of a H-passivated Si (100) surface. These oxide patterns were used as masks for selective etc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3b03b6f2534c73af1c9688c4fe64e0c7
https://doi.org/10.1016/0921-4526(96)00429-2
https://doi.org/10.1016/0921-4526(96)00429-2
Publikováno v:
Applied Physics Letters. 67:3283-3285
The density of defects in the buried oxide of implanted oxide silicon‐on‐insulator material which cause low resistance paths between the substrate and top silicon layer has been greatly reduced by high temperature oxidation. The mechanism for thi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::459f0f1aa62d79a7be165280ee2ef505
https://doi.org/10.1063/1.115221
https://doi.org/10.1063/1.115221
Publikováno v:
Applied Physics Letters. 66:1388-1390
The fabrication of nanometer‐scale side‐gated silicon field effect transistors using an atomic force microscope is reported. The probe tip was used to define nanometer‐scale source, gate, and drain patterns by the local anodic oxidation of a pa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fe310b3e92dfaa69e715d18873356c67
https://doi.org/10.1063/1.113210
https://doi.org/10.1063/1.113210