Zobrazeno 1 - 6
of 6
pro vyhledávání: '"P. J. M. Parmiter"'
Publikováno v:
Journal of Electronic Materials. 30:1361-1368
Optoelectronic modulation spectroscopy (OEMS) has been used to reveal defect states in 4H-SiC. Pairs of magnitude and phase spectra have been used to infer whether they were electron or hole traps. Eleven discrete trap responses have been observed, e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::22aa4dc39b7b24202ebfd704cd7e95df
https://doi.org/10.1007/s11664-001-0125-9
https://doi.org/10.1007/s11664-001-0125-9
Autor:
D. Lee, S.K. Jones, R.S. Balmer, J.C. Birbeck, Michael J. Uren, R.H. Wallis, Trevor Martin, P. J. M. Parmiter, B.T. Hughes
Publikováno v:
Journal of Crystal Growth. 230:579-583
Undoped 28 nm AlGaN on 1 μm GaN was grown by MOVPE for high power microwave HFETs. Non-destructive methods for rapid characterisation of the layers are described. Double contact mercury probe capacitance voltage measurements gave valuable informatio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6afe0c5803df50e20e8e0ba95fe0181c
https://doi.org/10.1016/s0022-0248(01)01300-8
https://doi.org/10.1016/s0022-0248(01)01300-8
Autor:
P. J. M. Parmiter, J. G. Swanson
Publikováno v:
Journal of Electronic Materials. 25:1506-1513
The effects on the insulator-semiconductor interface of two different deposition methods of silicon nitride on In0.53Ga0.47As have been electronically studied using capacitance-voltage (CV) and deep level transient spectroscopy (DLTS) measurements. T
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::221f6d59407dec24735454422190d889
https://doi.org/10.1007/bf02655391
https://doi.org/10.1007/bf02655391
Autor:
Sakellaris Mailis, P. J. M. Parmiter, Trevor J. Hall, Stavros Pissadakis, L. Boutsikaris, P. Dainty, Nikolaos A. Vainos
Publikováno v:
Applied optics. 35(32)
Excimer-laser microetching of a variety of materials is applied to the fabrication of surface-relief optical microstructures of arbitrary morphology, with particular emphasis on computer-generated holographic structures. High-definition, high-radiati
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::09a1299e3a9e0b509693ec35159a7f79
https://pubmed.ncbi.nlm.nih.gov/21127656
https://pubmed.ncbi.nlm.nih.gov/21127656
Autor:
Trevor J. Hall, P. J. M. Parmiter, M. van Daalen, M. A. Hands, J. K. Slack, D. Pignon, John Shawe-Taylor
Publikováno v:
Optics letters. 21(3)
An experiment using the phenomenon of percolation has been conducted to demonstrate the implementation of neural functionality (summing and sigmoid transfer). A simple analog approximation to digital percolation is implemented. The device consists of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::38daf7929aca06c8205115334b2337aa
https://pubmed.ncbi.nlm.nih.gov/19865359
https://pubmed.ncbi.nlm.nih.gov/19865359
Autor:
N.A. Vainos, L. Boutsikaris, A. Petrakis, Stavros Pissadakis, P. Dainty, Sakellaris Mailis, Nicholas Madamopoulos, P. J. M. Parmiter, Trevor J. Hall
Publikováno v:
SPIE Proceedings.
Excimer laser microetching is applied on various substrate materials, including metals, metal alloys, semiconductors, and polymers, of arbitrary geometrical shape for fabricating surface-relief optical microstructures with very fine features (micron
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cbc31ea8836d0cd1b26cb830a91417f6
https://doi.org/10.1117/12.206284
https://doi.org/10.1117/12.206284