Zobrazeno 1 - 10
of 38
pro vyhledávání: '"P. J. Lemonias"'
Publikováno v:
Journal of Lightwave Technology. 20:507-514
High-speed metamorphic double heterojunction photodiodes were fabricated on GaAs substrates for long-wavelength optical fiber communications. The high quality linearly graded quaternary InGaAlAs metamorphic buffer layer made possible the growth of ex
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a8a40900d19cd535dd1951cac623232c
https://doi.org/10.1109/50.989001
https://doi.org/10.1109/50.989001
Autor:
Thomas E. Kazior, P.F. Marsh, C.S. Whelan, Iii. R.E. Leoni, S.J. Lichwala, W. E. Hoke, P. J. Lemonias, S.M. Lardizabal, P. Lyman, R.A. McTaggart
Publikováno v:
IEEE Journal of Solid-State Circuits. 35:1307-1311
This paper reports on state of-the-art HEMT devices and circuit results utilizing 32% and 60% indium content InGaAs channel metamorphic technology on GaAs substrates. The 60% In metamorphic HEMT (MHEMT) has achieved an excellent 0.61-dB minimum noise
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0992f9e74ff0157ca54b0b447bb9b583
https://doi.org/10.1109/4.868040
https://doi.org/10.1109/4.868040
Autor:
A. Torabi, K. C. Hsieh, R. M. Beaudoin, L.-J. Chou, P. S. Lyman, W. A. Bonner, R. A. McTaggart, J. J. Mosca, P. J. Lemonias, William E. Hoke, B. Lent
Publikováno v:
Journal of Applied Physics. 82:3576-3580
Double pulse doped AlGaAs/InGaAs/AlGaAs pseudomorphic high electron mobility transistor (PHEMT) structures have been grown on InxGa1−xAs (x=0.025–0.07) substrates using molecular beam epitaxy. A strain compensated, AlGaInAs/GaAs superlattice was
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f5543096691b7043cb72ca413d939584
https://doi.org/10.1063/1.365676
https://doi.org/10.1063/1.365676
Publikováno v:
Journal of Electronic Materials. 22:99-104
Beryllium-doped GaAs layers have been grown by molecular beam epitaxy with doping concentrations up to 1.2 × 1020 cm−3. Upon initiation of doping, an unintentional substrate temperature rise is observed pyrometrically that is caused by various rad
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::012a8ba3baf0bd24ca92f7b852475942
https://doi.org/10.1007/bf02665730
https://doi.org/10.1007/bf02665730
Publikováno v:
IEEE Electron Device Letters. 22:364-366
Monolithic integration of enhancement (E)- and depletion (D)-mode metamorphic In/sub 0.52/Al/sub 0.48/As/In/sub 0.53/Ga/sub 0.47/As/GaAs HEMTs with 0.35 /spl mu/m gate-length is presented for the first time. Epilayers are grown on 3-inch SI GaAs subs
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ae891c0b2584e27ee98cfc30fd8d704b
https://doi.org/10.1109/55.936344
https://doi.org/10.1109/55.936344
Publikováno v:
IEEE Photonics Technology Letters. 13:151-153
Metamorphic In/sub 0.53/Ga/sub 0.47/As p-i-n photodiodes on GaAs substrate exhibiting the lowest dark current ever reported were fabricated and characterized. Their dark current, DC and RF performances were measured and compared for devices of differ
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f0f928bd4fbc9e310b9b6cdef527ba57
https://doi.org/10.1109/68.910518
https://doi.org/10.1109/68.910518
Publikováno v:
Journal of Crystal Growth. 111:1024-1028
An RF plasma source has been integrated into a molecular beam epitaxial system for growth of nitride films. Using an optical detector on the source, the presence of nitrogen atoms in the N 2 plasma region is deduced as a function of operating conditi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e30d4afa2e99832ae3e22f9d1db3ef37
https://doi.org/10.1016/0022-0248(91)91125-t
https://doi.org/10.1016/0022-0248(91)91125-t
Publikováno v:
Journal of Crystal Growth. 111:269-273
Carbon doped GaAs and Ga0.7Al0.3As films have been grown by molecular beam epitaxy using a resistively heated graphite filament. At moderate doping levels, the effect on carbon doping of the VIII flux ratio and the nature of the arsenic species was f
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e2df742e7de01685e3bcb266b9dbd7a7
https://doi.org/10.1016/0022-0248(91)90983-c
https://doi.org/10.1016/0022-0248(91)90983-c
Autor:
R.E. Leoni, P. J. Lemonias, S. Kang, R. Wohlert, R.A. McTaggart, S.M. Lardizabal, C.S. Whelan, P.M. McIntosh, William E. Hoke, Thomas E. Kazior, P.F. Marsh
Publikováno v:
GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 21st Annual. Technical Digest 1999 (Cat. No.99CH36369).
An excellent 0.61 dB minimum noise figure and 11.8 dB associated gain at 26 GHz, have been obtained for a InAlAs/InGaAs metamorphic HEMT on a GaAs substrate. Low-noise amplifiers show under 1.8 dB noise figure with gain greater than 24 dB across 27-3
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::003f03e0f28a38d535a496c15f72e47b
https://doi.org/10.1109/gaas.1999.803762
https://doi.org/10.1109/gaas.1999.803762
Autor:
Thomas E. Kazior, P.M. McIntosh, R. Wohlert, P. J. Lemonias, William E. Hoke, R.E. Leoni, S.M. Lardizabal, S.L.G. Chu, R.A. McTaggart, P.F. Marsh, C.S. Whelan, A.M. Bowlby, S. Kang
Publikováno v:
1999 IEEE MTT-S International Microwave Symposium Digest (Cat. No.99CH36282).
Excellent noise (0.41 dB minimum noise figure with 11.5 dB associated gain at 18 GHz) and linearity (third order intercept point of 37.6 dBm at 42.5 mW DC power giving a linearity figure of merit (LFOM) of 137) have been obtained for InAlAs-InGaAs me
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::21deb027fdb81222627a9f50e874e66a
https://doi.org/10.1109/mwsym.1999.779435
https://doi.org/10.1109/mwsym.1999.779435