Zobrazeno 1 - 9
of 9
pro vyhledávání: '"P. I. Mikulan"'
Publikováno v:
Journal of Applied Physics. 79:517-525
New experimental results are presented which provide evidence for hydrogen passivation and depassivation of plasma‐charging‐induced defects in gate oxides and at oxide/silicon interfaces. The devices used in this study were 0.5 μm n‐channel me
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ba2871d6588773e1e9e45df2e91f2c8a
https://doi.org/10.1063/1.360860
https://doi.org/10.1063/1.360860
Publikováno v:
Microelectronic Engineering. 28:47-50
The interactions of hydrogen with plasma-charging induced defects have been examined using 0.5 μm n-channel LDD MOSFETs fabricated on p-type Si by employing Cl2/HBr-based chemistries and CHF3/CF4-based chemistries polycrystalline Si gate definition
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::da6cf38e45a78bd7d1b4cc4ad3e5f489
https://doi.org/10.1016/0167-9317(95)00013-x
https://doi.org/10.1016/0167-9317(95)00013-x
Autor:
P. I. Mikulan, P. Arleo, B. Divincenzo, Stephen J. Fonash, K. Reinhardt, T. Gu, J. Marks, C.-L. Yang
Publikováno v:
MRS Online Proceedings Library. 315:267-272
An oxygen treatment in a high density plasma system is used to effectively remove the fluorocarbon polymer that deposits on the silicon substrate surface after an oxide etch process. Schottky current-voltage analysis, spectroscopic ellipsometry, and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::80a0b5c87b6047f5036a23be039b3a11
https://doi.org/10.1557/proc-315-267
https://doi.org/10.1557/proc-315-267
Autor:
J. F. Rembetski, P. I. Mikulan, Osama O. Awadelkarim, Stephen J. Fonash, T. Gu, Y. D. Chan, R. A. Ditizio
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 11:1332-1336
We explore the effects of polycrystalline Si overetches on the Si substrate in the SiO2/Si materials system. Conventional reactive ion etching (RIE) and magnetically enhanced RIE (MERIE) with Cl2 or HBr‐based chemistries are used. The introduction
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::926861dcc2aa7bac055f149d63d31c06
https://doi.org/10.1116/1.578549
https://doi.org/10.1116/1.578549
Publikováno v:
IEEE Electron Device Letters. 15:85-87
Hydrogen permeation and the simultaneous Si substrate defect generation occurring during contact reactive ion etching utilizing CHF/sub 3/-based chemistries were studied using SiO/sub 2//Si structures. The process-parameter space for the etches consi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1abd4e8b8ef2eb66c25089613d042a14
https://doi.org/10.1109/55.285394
https://doi.org/10.1109/55.285394
Autor:
T. Gu, Osama O. Awadelkarim, P. I. Mikulan, Stephen J. Fonash, R. A. Ditizio, Y.D. Chan, J.F. Rembetski
Publikováno v:
IEEE Electron Device Letters. 14:167-169
The authors explore the silicon substrate damage produced by Cl/sub 2/- and HBr-based reactive ion polycrystalline silicon overetches used in the definition of polycrystalline-Si/SiO/sub 2//single-crystal-Si structures. The damage-caused traps, exami
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f593d83df7ea307a070e6abb0d29cb08
https://doi.org/10.1109/55.215162
https://doi.org/10.1109/55.215162
Autor:
P. I. Mikulan, Osama O. Awadelkarim, R. A. Ditizio, Y.D. Chan, Stephen J. Fonash, K. A. Reinhardt, T. Gu
Publikováno v:
Applied Physics Letters. 62:958-960
Reactive ion etching and magnetically enhanced reactive ion etching with CHF3/O2 are employed to remove SiO2 from boron‐doped Si substrates. Etch‐induced gap states in the substrate are monitored using deep‐level transient spectroscopy. The dom
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::555c4ba99e2dcde2f2b562b532e0129e
https://doi.org/10.1063/1.108532
https://doi.org/10.1063/1.108532
Publikováno v:
MRS Proceedings. 309
In this study, possible SiO2 damage that could result from several different photoresist ashing techniques has been assessed using patterned photoresist over blanket oxides. The types of ashing systems used were RF power (RF), upstream ozone generato
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::62be201f2ab9698591140f20d90a5f8e
https://doi.org/10.1557/proc-309-61
https://doi.org/10.1557/proc-309-61
Autor:
R. A. Ditizio, Stephen J. Fonash, T. Gu, J.F. Rembetski, Osama O. Awadelkarim, Y.D. Chan, P. I. Mikulan, Robert W. Collins, K. A. Reinhardt
Publikováno v:
MRS Proceedings. 259
Surface conditioning issues arising from pattern transfer utilizing plasma etching are discussed. Two situations are considered: one in which an oxide on a silicon substrate is exposed to a plasma etching environment and one in which a silicon substr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0d99e33a580e2277d1c26dfbe44fba69
https://doi.org/10.1557/proc-259-55
https://doi.org/10.1557/proc-259-55