Zobrazeno 1 - 10
of 22
pro vyhledávání: '"P. I. Arseyev"'
Publikováno v:
Scientific Reports, Vol 11, Iss 1, Pp 1-11 (2021)
Abstract In multi-channel tunneling systems quantum interference effects modify tunneling conductance spectra due to Fano effect. We investigated the impact of Hubbard type Coulomb interaction on tunneling conductance spectra for the system formed by
Externí odkaz:
https://doaj.org/article/d9bd05027d6d49e1b52ea380b2bf9ae1
Publikováno v:
Scientific Reports, Vol 11, Iss 1, Pp 1-17 (2021)
Abstract We developed general approach for the analysis of tunneling current and its zero frequency noise for a wide class of systems where electron transport occurs through the intermediate structure with localized electrons. Proposed approach opens
Externí odkaz:
https://doaj.org/article/9c17a421990542a8afe63494619207db
Autor:
Igor M. Sokolov, N. S. Maslova, V. N. Luchkin, P. I. Arseyev, V. V. Palyulin, Vladimir N. Mantsevich
Publikováno v:
Scientific Reports, Vol 11, Iss 1, Pp 1-11 (2021)
Scientific Reports
Scientific Reports
In multi-channel tunneling systems quantum interference effects modify tunneling conductance spectra due to Fano effect. We investigated the impact of Hubbard type Coulomb interaction on tunneling conductance spectra for the system formed by several
Publikováno v:
Laser Physics Letters. 19:055208
We propose a protocol for spatial ‘stretching’ of an initially prepared entangled state along chains of quantum dots (QDs) or quantum wires arranged in perpendicular directions. We theoretically analyze such stretching for a triplet superposition
Publikováno v:
JETP Letters. 108:485-491
We analyzed the influence of applied bias changing and external magnetic field switching on the non-stationary spin-polarized currents behavior in the correlated single-level quantum dot coupled to the non-magnetic leads. It was demonstrated that spi
Publikováno v:
JETP Letters. 102:536-543
We revealed that the susceptibility and polarization of two-level quantum dot (QD) with Coulomb correlations between localized electrons weakly connected to the reservoirs are determined not only by the stationary electron filling numbers difference.
Publikováno v:
JETP Letters. 100:812-816
We report on the direct observation by means of low temperature scanning tunneling microscopy and spectroscopy (STM/STS) of additional peculiarities in the local tunneling conductivity caused by the presence of low-dimensional structures—Ge adatoms
Autor:
P. I. Arseyev
Publikováno v:
Письма в Журнал экспериментальной и теоретической физики. :106-107
Autor:
N. S. Maslova, P. I. Arseyev
Publikováno v:
International Journal of Nanoscience. :411-414
Tunneling through a system with two discrete electron levels coupled by electron-phonon interaction is considered. The interplay between elastic and inelastic tunneling channels is analyzed not only for weak electron-phonon coupling but also for stro
Publikováno v:
JETP Letters. 85:277-282
The results of low temperature scanning tunneling microscopy (STM) investigations of a clean Ge(111) surface are presented. Bias dependent shifts of the atomic-scale structure caused by the (2 × 1) reconstruction of the Ge(111) surface are observed.