Zobrazeno 1 - 10
of 223
pro vyhledávání: '"P. Hesto"'
The purpose of this article is to present an accurate way, based on a physical description, to simulate Coulomb blockade devices. The method underlying the simulations depends only on fundamental parameters of the system and does not require the use
Externí odkaz:
http://arxiv.org/abs/cond-mat/0511652
We report a method for probing electromechanical properties of multiwalled carbon nanotubes(CNTs). This method is based on AFM measurements on a doubly clamped suspended CNT electrostatically deflected by a gate electrode. We measure the maximum defl
Externí odkaz:
http://arxiv.org/abs/cond-mat/0510382
Publikováno v:
IEEE Trans. Electron Devices 51 (5), 749-756 (2004)
This paper discusses the influence of the channel impurity distribution on the transport and the drive current in short-gate MOSFET. In this purpose, a careful description of electron-ion interaction suitable for the case of discrete impurities has b
Externí odkaz:
http://arxiv.org/abs/cond-mat/0310718
Publikováno v:
Physica E: Low-dimensional Systems and Nanostructures. 21:496-500
This paper deals with the electronic properties of Si and Ge nanocrystals (NCs) with a view to studying their potentialities for single electron devices. The 3D Poisson–Schrodinger equations are self-consistently solved for a single NC embedded in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::025ef5e835f8892cd25fde03e6c2b9b2
https://doi.org/10.1016/j.physe.2003.11.046
https://doi.org/10.1016/j.physe.2003.11.046
Publikováno v:
Journal of Computational Electronics. 2:449-453
This article presents a self-consistent 3D Poisson-Schrodinger calculation based on the density functional theory for silicon quantum dot under bias voltage. For various shapes and sizes of quantum dot surrounded by silicon dioxide, the energy levels
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3ae1197487a80ed7fbe2b85c9153f54d
https://doi.org/10.1023/b:jcel.0000011469.24091.ca
https://doi.org/10.1023/b:jcel.0000011469.24091.ca
Fabrication and characterization of sub-3 nm gaps for single-cluster and single-molecule experiments
Publikováno v:
Nanotechnology. 14:772-777
We describe a simple process for preparing sub-3 nm gaps by means of controllable breaking of gold wires lithographed on a SiO2/Si substrate at low temperature (4.2 K). We show that the mechanism involved is thermally assisted electromigration. We in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fc1a302ffbd73d0308a3953376ac83c9
https://doi.org/10.1088/0957-4484/14/7/313
https://doi.org/10.1088/0957-4484/14/7/313
Publikováno v:
Solid-State Electronics. 46:1061-1067
A 3D Monte Carlo (MC) device simulation model is developed for the treatment of discrete random dopant distribution in sub-100 nm MOSFET. The electron–ion (e–i) interaction model is based on a suitable description of long-range Coulomb interactio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3c5489ea9a0453873e0433d598a6ccf2
https://doi.org/10.1016/s0038-1101(02)00042-4
https://doi.org/10.1016/s0038-1101(02)00042-4
Publikováno v:
Physica E: Low-dimensional Systems and Nanostructures. 10:86-90
We propose a study of the spin field effect transistor (spin-FET), as a structure for the investigation of the physics of spin polarized transport in ferromagnet/semiconductor structures and as a device for fast electronics. From Monte Carlo simulati
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4655a960ca4166b525eaf1b8ec2187c1
https://doi.org/10.1016/s1386-9477(01)00059-5
https://doi.org/10.1016/s1386-9477(01)00059-5
Publikováno v:
IEEE Transactions on Electron Devices. 48:715-721
Charge control and gate leakage in metal-oxide-semiconductor (MOS) structures and heterojunction-MOS structures with ultrathin oxide (1 nm) are investigated using both classical and wave-mechanical calculations. In the classical approach, direct tunn
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bb84c98cf2f67d336a47c76e794bd7f2
https://doi.org/10.1109/16.915702
https://doi.org/10.1109/16.915702
Publikováno v:
Journal of Materials Science: Materials in Electronics. 12:245-248
The conduction band offset for strained Si1-x-yGexCy layers grown on Si(0 0 1) is estimated by considering separately the hydrostatic strain, the uniaxial strain, and the intrinsic chemical effect of Ge and C. Tensile-strained C-containing layers pro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8f4145e7bd4ebfb46d0d02ff5f599e18
https://doi.org/10.1023/a:1011211420560
https://doi.org/10.1023/a:1011211420560