Zobrazeno 1 - 10
of 26
pro vyhledávání: '"P. H. Beton"'
Autor:
C. Elias, P. Valvin, T. Pelini, A. Summerfield, C. J. Mellor, T. S. Cheng, L. Eaves, C. T. Foxon, P. H. Beton, S. V. Novikov, B. Gil, G. Cassabois
Publikováno v:
Nature Communications, Vol 10, Iss 1, Pp 1-7 (2019)
Insulating hexagonal boron nitride (hBN) is theoretically expected to undergo a crossover to a direct bandgap in the monolayer limit. Here, the authors perform optical spectroscopy measurements on atomically thin epitaxial hBN providing indications o
Externí odkaz:
https://doaj.org/article/37ee1074b78f488f83916006346b401a
Autor:
G. Cassabois, G. Fugallo, C. Elias, P. Valvin, A. Rousseau, B. Gil, A. Summerfield, C. J. Mellor, T. S. Cheng, L. Eaves, C. T. Foxon, P. H. Beton, M. Lazzeri, A. Segura, S. V. Novikov
Publikováno v:
Physical Review X, Vol 12, Iss 1, p 011057 (2022)
The light-matter interaction in bulk semiconductors is in the strong-coupling regime with hybrid eigenstates, the so-called exciton polaritons and phonon polaritons. In two-dimensional (2D) systems, the translational invariance is broken in the direc
Externí odkaz:
https://doaj.org/article/da4eed7dc9d1474b89bea97bb5ddbc91
Autor:
J. D. Albar, A. Summerfield, T. S. Cheng, A. Davies, E. F. Smith, A. N. Khlobystov, C. J. Mellor, T. Taniguchi, K. Watanabe, C. T. Foxon, L. Eaves, P. H. Beton, S. V. Novikov
Publikováno v:
Scientific Reports, Vol 7, Iss 1, Pp 1-8 (2017)
Abstract We report the use of a novel atomic carbon source for the molecular beam epitaxy (MBE) of graphene layers on hBN flakes and on sapphire wafers at substrate growth temperatures of ~1400 °C. The source produces a flux of predominantly atomic
Externí odkaz:
https://doaj.org/article/3129cbf984284527ac9876d7d8fbcca0
Autor:
Oleg Makarovsky, Richard J. A. Hill, Tin S. Cheng, Alex Summerfield, Takeshi Taniguchi, Kenji Watanabe, Christopher J. Mellor, Amalia Patanè, Laurence Eaves, Sergei V. Novikov, Peter H. Beton
Publikováno v:
Communications Materials, Vol 5, Iss 1, Pp 1-6 (2024)
Abstract Graphene placed on hexagonal boron nitride (hBN) has received significant interest due to its excellent electrical performance and physics phenomena, such as superlattice Dirac points. Direct molecular beam epitaxy growth of graphene on hBN
Externí odkaz:
https://doaj.org/article/313606db9c814b759d7f0958af45188d
Autor:
Kohei Shima, Tin S. Cheng, Christopher J. Mellor, Peter H. Beton, Christine Elias, Pierre Valvin, Bernard Gil, Guillaume Cassabois, Sergei V. Novikov, Shigefusa F. Chichibu
Publikováno v:
Scientific Reports, Vol 14, Iss 1, Pp 1-8 (2024)
Abstract Cathodoluminescence (CL) spectroscopy is a suitable technique for studying the luminescent properties of optoelectronic materials because CL has no limitation on the excitable bandgap energy and eliminates ambiguous signals due to simple lig
Externí odkaz:
https://doaj.org/article/d9f906e2499b4a14b6b4e72c9ecf4f02
Publikováno v:
Beilstein Journal of Nanotechnology, Vol 5, Iss 1, Pp 394-401 (2014)
We show that thin films of C60 with a thickness ranging from 10 to 100 nm can promote adhesion between a Au thin film deposited on mica and a solution-deposited layer of the elastomer polymethyldisolaxane (PDMS). This molecular adhesion facilitates t
Externí odkaz:
https://doaj.org/article/b30ac55068d548c39a885bbdc679f493
Publikováno v:
The journal of physical chemistry. B. 109(24)
We have investigated the ordered phases of the perylene derivatives perylene-3,4,9,10-tetracarboxylic-3,4,9,10-dianhydride (PTCDA) and the imide analogue PTCDI on the Ag-Si(111)square root(3) x square root(3)R30 degrees surface using scanning tunneli
Publikováno v:
Langmuir; Feb2009, Vol. 25 Issue 4, p2278-2281, 4p
Publikováno v:
Applied Physics Letters. 66:3527-3527
Autor:
L. M. A. Perdigão, E. W. Perkins, J. Ma, P. A. Staniec, B. L. Rogers, N. R. Champness, P. H. Beton
Publikováno v:
Journal of Physical Chemistry B; Jun2006, Vol. 110 Issue 25, p12539-12542, 4p