Zobrazeno 1 - 10
of 25
pro vyhledávání: '"P. Givelin"'
Publikováno v:
Microelectronics Reliability. 43:1551-1556
Publikováno v:
IEEE Journal of Solid-State Circuits. 34:1283-1289
A methodology for the application of two-dimensional (2-D) device simulation to electrostatic discharge (ESD) events is presented. Correlation of ESD simulation results with experimental data is illustrated using a grounded base n-p-n transistor. It
Publikováno v:
Proceedings of the 1998 Bipolar/BiCMOS Circuits and Technology Meeting (Cat. No.98CH36198).
In this paper, we first present a methodology for the application of two-dimensional device simulation to ESD events. The correlation of ESD simulation results with experimental data is illustrated by the example of a grounded base n-p-n transistor.
Publikováno v:
2001 IEEE International Reliability Physics Symposium Proceedings. 39th Annual (Cat. No.00CH37167).
Analytical expressions for the breakdown voltage of an NPN with a resistively grounded base, both with and without the Zener diode trigger which is used in a common ESD protection circuit, are presented for the first time. The results are used to exp
Publikováno v:
Analog Integrated Circuits and Signal Processing; November 1995, Vol. 8 Issue: 3 p219-231, 13p
Publikováno v:
Analog Integrated Circuits and Signal Processing; November 1995, Vol. 8 Issue: 3 p233-246, 14p
Publikováno v:
Analog Integrated Circuits and Signal Processing; March 1995, Vol. 7 Issue: 2 p103-111, 9p
Publikováno v:
IEE Proceedings - Circuits, Devices and Systems; December 1995, Vol. 142 Issue: 6 p357-363, 7p
Publikováno v:
Microelectronics Journal; November 1993, Vol. 24 Issue: 7 p801-810, 10p
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