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Metalorganic vapor phase epitaxy of InP using the novel P-source ditertiarybutyl phosphine (DitBuPH)

Autor: G. Zimmermann, Ernst O. Göbel, B. Spill, Jörg Lorberth, P. Gimmnich, H. Protzmann, Wolfgang Stolz, Z. Spika

Publikováno v: Journal of Electronic Materials. 25:443-448

A variety of monoalkyl, dialkyl as well as trialkyl P-compounds, containing ethyl, isopropyl, and tertiarybutyl rest groups have been synthesized and used for the growth of InP bulk epitaxial layers by low pressure metalorganic vapour phase epitaxy.

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::68cce4b1404bc571e4a6d0b2066367e0
https://doi.org/10.1007/bf02666618

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Investigations on deep traps in GaAs and (Al Ga1−)As bulk layers grown by metalorganic vapour-phase epitaxy using the new alternative arsenic precursor diethyl-tert-butylarsin

Autor: G. Zimmermann, S. Weiß, A. Bock, A. Salzmann, Ernst O. Göbel, Z. Spika, U. Sudjadi, Jörg Lorberth, Wolfgang Stolz, A. Greiling, P. Gimmnich, R. Kassing

Publikováno v: Journal of Crystal Growth. 146:521-526

Metalorganic vapour-phase epitaxy (MOVPE) growth experiments for GaAs and (AlGa)As have been performed as a function of growth temperature and V/III ratio using the new alternative precursor diethyl-tert-butylarsin (DEtBAs) in combination with trimet

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::427c9305581680dc47f5c3394d4e9625
https://doi.org/10.1016/0022-0248(94)00574-5

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GaAs substrate pretreatment and metalorganic vapour phase epitaxy of GaAs, AlAs and (AlGa) As using β-eliminating trialkyl-As precursors

Autor: Jörg Lorberth, Z. Spika, A. Salzmann, A. Greiling, Ernst O. Göbel, Wolfgang Stolz, P. Gimmnich, T. Marschner, B. Spill, G. Zimmermann

Publikováno v: Journal of Crystal Growth. 145:512-519

The novel β-hydride eliminating trialkyl-As compounds diethyl-tertiarybutyl-As (DEtBAs) and diethyl-isopropyl-As (DEiPrAs) has been used as less toxic substitutes for AsH 3 for both the cleaning of oxide passivated GaAs wafers prior to growth and th

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::3b75e94f802d5a07418347bb58de26a6
https://doi.org/10.1016/0022-0248(94)91100-2

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Amino-arsine and -phosphine compounds for the MOVPE of III–V semiconductors

Autor: G. Zimmermann, Wolfgang Stolz, Jörg Lorberth, Wolfgang Richter, O. Zsebök, Ernst O. Göbel, P. Kurpas, P. Gimmnich, T. Filz, T. Marschner, H. Protzmann

Publikováno v: Journal of Crystal Growth. 129:37-44

The alternative group V sources trisdimethylamino-arsine (TDMAAs) and trisdimethylamino-phosphine (TDMAP) have been used as substitutes for the highly toxic group V hydrides AsH 3 and PH 3 for the growth of GaAs, (AlGa)As and InP epitaxial layers by

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::725d495eb0f643bc5f2acf028c75c299
https://doi.org/10.1016/0022-0248(93)90431-u

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New alternative arsenic precursors for the metal-organic vapour-phase epitaxy of III–V semiconductors: in-situ formation of AsH functionality by β elimination of specific metal-organic arsenic compounds

Autor: P. Gimmnich, Jörg Lorberth, H. Protzmann, Ernst O. Göbel, Klaus Rademann, C. Thalmann, Wolfgang Stolz, A. Greiling, G. Zimmermann

Publikováno v: Materials Science and Engineering: B. 17:21-24

In this study we report on the chemical synthesis, thermal decomposition and first metal-organic vapour-phase epitaxy (MOVPE) growth studies for a new class of metal-organic As compounds, designed as substitutes for the highly toxic AsH3. The key fea

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::695e10fd3603d800376c4c7d6a747f82
https://doi.org/10.1016/0921-5107(93)90075-x

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In-situ formation of As-H functions by β-elimination of specific metalorganic arsenic compounds for the MOVPE of III/V semiconductors

Autor: C. Thalmann, H. Protzmann, G. Zimmerman, Ernst O. Göbel, Wolfgang Stolz, A. Greiling, K. Rademann, P. Gimmnich, Jörg Lorberth

Publikováno v: Journal of Crystal Growth. 124:136-141

We report on the chemical synthesis, thermal decomposition studies and the first low pressure MOVPE growth experiments for a new class of metalorganic As compounds, designed as substitutes for the highly toxic AsH3. The key feature of these molecules

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::59a9ec716e4c809354c143d000082a04
https://doi.org/10.1016/0022-0248(92)90450-w

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Properties of (GaIn)As and InP bulk epitaxial layers. (GaIn)As/InP-heterostructures and pin-detector device structures grown by using the alternative sources ditertiarybutyl-arsine and ditertiarybutyl phosphine

Autor: P. Gimmnich, J. Scherb, Wolfgang Stolz, M. Müller, Z. Spika, H. Protzmann, W. Korber, Jörg Lorberth, Ernst O. Göbel, F. Hohnsdorf

Publikováno v: Proceedings of 8th International Conference on Indium Phosphide and Related Materials.

In this work the use of the novel ditertiarybutyl-phosphorous and arsenic precursors for low pressure metalorganic vapor phase epitaxy (LP-MOVPE) application with respect to InP/(GaIn)As-heterostructures and pin-detector device structures has been st

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::5b66b43a3fbcaff8f45e630a438924b3
https://doi.org/10.1109/iciprm.1996.492285

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