Zobrazeno 1 - 10
of 133
pro vyhledávání: '"P. Gaworzewski"'
Publikováno v:
Journal of Applied Physics. 90:3578-3584
Fluorine segregation influences the intrinsic reliability of thin gate oxides in poly-Si/SiO2/Si structures. We analyze diffusion and segregation kinetics of F in gate stacks with 5 nm gate oxides using secondary ion mass spectroscopy. Well defined d
Publikováno v:
Microelectronic Engineering. 56:195-203
Si(113) may be a competitive substrate material for Si integrated circuits. High-quality SiO2/Si(113) films can be produced by standard oxidation techniques. Based on investigations of the initial stages of oxidation by Scanning Tunneling Microscopy
Publikováno v:
Microelectronics Reliability. 40:1335-1340
We analyze diffusion and segregation kinetics of fluorine atoms in poly-Si / SiO2 / Si structures with gate oxides of 5 nm by means of secondary ion mass spectroscopy. Well defined doses of fluorine were introduced by ion implantation. Our results in
Publikováno v:
Journal of Applied Physics. 84:709-712
We have investigated boron doped Si1−xGex bulk crystals over the composition range 0⩽x⩽0.13 by photoconductivity, photoluminescence, and temperature-dependent Hall effect measurements. Hall effect measurements yield the relation EI=(44.4–108x
Publikováno v:
Journal of Applied Physics. 83:5258-5263
Experimental results are presented on the electrical properties of lightly boron doped bulk Si1−xGex as a function of the Ge content x in the range 0
Autor:
P. Gaworzewski, H. J. Osten
Publikováno v:
Journal of Applied Physics. 82:4977-4981
We have investigated the temperature dependencies of charge carrier densities and Hall mobilities in tensile strained Si1−yCy and in compressively strained Si1−x−yGexCy layers. In both cases, the measured charge carrier densities at room temper
Publikováno v:
Journal of Applied Physics. 79:129-133
Analyses of spreading resistance measurements in Si samples with dopant profiles of the dopant sequence lowly doped on highly doped yield unreliable results if the dopant profiles are extremely steep or ultra‐shallow. Reasons for this behavior are
Publikováno v:
Semiconductor Science and Technology. 10:326-331
Phosphorus diffusion in spike-doped chemical vapour deposited layers and its interfacial segregation at the polysilicon/silicon substrate interface was studied by means of secondary-ion mass spectroscopy and spreading resistance measurements. The tim
Publikováno v:
Journal of Applied Physics. 75:7869-7874
Boron spikes within multilayer structures of Si and of Si1−xGex deposited by means of molecular‐beam epitaxy (MBE) at different temperatures have been investigated by secondary‐ion‐mass spectrometry (SIMS), spreading resistance, and Hall‐ef
Autor:
G. Morgenstern, H. Kühne, K. Tittelbach-Helmrich, P. Gaworzewski, D. Krüger, Klaus Schmalz, Peter Zaumseil, I. Babanskaya, Th. Morgenstern
Publikováno v:
Solid State Phenomena. :409-416