Zobrazeno 1 - 10
of 1 104
pro vyhledávání: '"P. Flandre"'
SRAM bitcells in retention mode behave as autonomous stochastic nonlinear dynamical systems. From observation of variability-aware transient noise simulations, we provide an unidimensional model, fully characterizable by conventional deterministic SP
Externí odkaz:
http://arxiv.org/abs/2402.11691
Stability of ultra-low-voltage SRAM bitcells in retention mode is threatened by two types of uncertainty: process variability and intrinsic noise. While variability dominates the failure probability, noise-induced bit flips in weakened bitcells lead
Externí odkaz:
http://arxiv.org/abs/2402.11685
Autor:
Nicolas Roisin, Guillaume Brunin, Gian-Marco Rignanese, Denis Flandre, Jean-Pierre Raskin, Samuel Poncé
Publikováno v:
npj Computational Materials, Vol 10, Iss 1, Pp 1-11 (2024)
Abstract Strain engineering is a widely used technique for enhancing the mobility of charge carriers in semiconductors, but its effect is not fully understood. In this work, we perform first-principles calculations to explore the variations of the mo
Externí odkaz:
https://doaj.org/article/7ada9c1c34df4749a2097875649d6011
Autor:
Roisin, Nicolas, Colla, Marie-Stéphane, Scaffidi, Romain, Pardoen, Thomas, Flandre, Denis, Raskin, Jean-Pierre
A theoretical study of the band gap reduction under tensile stress is performed and validated through experimental measurements. First-principles calculations based on density functional theory (DFT) are performed for uniaxial stress applied in the [
Externí odkaz:
http://arxiv.org/abs/2308.10730
Publikováno v:
IEEE Journal of Solid-State Circuits, vol. 58, no. 8, pp. 2239-2251, Aug. 2023
In many applications, the ability of current references to cope with process, voltage, and temperature (PVT) variations is critical to maintaining system-level performance. However, temperature-independent current references operating in the nA range
Externí odkaz:
http://arxiv.org/abs/2302.04504
Autor:
Charline Sommer, Vanessa Neuhaus, Patricia Gogesch, Thierry Flandre, Susann Dehmel, Katherina Sewald
Publikováno v:
Journal of Immunotoxicology, Vol 21, Iss sup1, Pp S48-S59 (2024)
The skin is the organ most often affected by adverse drug reactions. Although these cutaneous adverse drug reactions (CADRs) often are mild, they represent a major burden for patients. One of the drugs inducing CADRs is aldesleukin, a recombinant int
Externí odkaz:
https://doaj.org/article/d7da3c4f6c9e4169b6cac7a4e73a7e96
Autor:
Luise A. Roser, Christina Sakellariou, Malin Lindstedt, Vanessa Neuhaus, Susann Dehmel, Charline Sommer, Martin Raasch, Thierry Flandre, Sigrid Roesener, Philip Hewitt, Michael J. Parnham, Katherina Sewald, Susanne Schiffmann
Publikováno v:
Journal of Immunotoxicology, Vol 21, Iss sup1, Pp S60-S78 (2024)
Drug-induced hepatotoxicity constitutes a major reason for non-approval and post-marketing withdrawal of pharmaceuticals. In many cases, preclinical models lack predictive capacity for hepatic damage in humans. A vital concern is the integration of i
Externí odkaz:
https://doaj.org/article/a931852d8d8840f494aa1daaaca9c913
This work presents how first-principles simulations validated through experimental measurements lead to a new accurate prediction of the expected Raman shift as a function of strain in silicon. Structural relaxation of a strained primitive cell is fi
Externí odkaz:
http://arxiv.org/abs/2212.03049
Publikováno v:
Sensors Actuators A Phys., vol. 339, p. 113491, 2022
A strain sensor inspired by a Widlar self-biased current source topology called $\beta$-multiplier is developed to obtain a strain-dependent reference current with high supply rejection. The sensor relies on the piezoresistive effect in the silicon M
Externí odkaz:
http://arxiv.org/abs/2201.13352
Autor:
Roisin, Nicolas, Brunin, Guillaume, Rignanese, Gian-Marco, Flandre, Denis, Raskin, Jean-Pierre
Publikováno v:
J. Appl. Phys. 130, 055105 (2021)
The optical properties of silicon can be greatly tuned by applying strain and opening new perspectives, particularly in applications where infrared is key. In this work, we use a recent model for the indirect light absorption of silicon and include t
Externí odkaz:
http://arxiv.org/abs/2108.07624