Zobrazeno 1 - 10
of 12
pro vyhledávání: '"P. F. MARSH"'
Autor:
Ausberto R. Velasquez Garcia, Adam J. Wentworth, Jenny M. Oettinger, James S. Fitzsimmons, Jeffrey F. Marsh, Mark E. Morrey, Shawn W. O'Driscoll
Publikováno v:
JSES International, Vol 8, Iss 6, Pp 1329-1330 (2024)
Externí odkaz:
https://doaj.org/article/f0640aadfa054e45ae17d371fc953cb7
Autor:
F. T. Aglas-Leitner, P. Juillard, A. Juillard, S. N. Byrne, S. Hawke, G. E. Grau, F. Marsh-Wakefield
Publikováno v:
Scientific Reports, Vol 12, Iss 1, Pp 1-11 (2022)
Abstract Here we present a comprehensive mass cytometry analysis of peripheral innate lymphoid cell (ILC) subsets in relapsing/remitting MS (RRMS) patients prior to and after onset of cladribine tablets (CladT). ILC analysis was conducted on CyTOF da
Externí odkaz:
https://doaj.org/article/db827259bc31478bbc8dfbaa12e1749e
Autor:
Martin Hartmann, Sascha Hermann, Phil F. Marsh, Christopher Rutherglen, Dawei Wang, Li Ding, Lian-Mao Peng, Martin Claus, Michael Schroter
Publikováno v:
IEEE Journal of Microwaves, Vol 1, Iss 1, Pp 275-287 (2021)
RF CNTFETs are one of the most promising devices for surpassing incumbent RF-CMOS technology in the near future. Experimental proof of concept that outperformed Si CMOS at the 130 nm technology has already been achieved with a vast potential for impr
Externí odkaz:
https://doaj.org/article/07bd314cb7944f07ad5e1d11e334a4dc
Publikováno v:
Journal of Road Safety, Vol 21, Iss 2 (2010)
This paper reports on the performance of a wire rope barrier on a narrow median installation on Centennial Highway, New Zealand. Since the time the speed limit was reduced from 100km/h to 80km/h and the wire rope median barrier was installed, no fata
Externí odkaz:
https://doaj.org/article/de6d20bc89bf43cea8469aa5836f15f4
Autor:
T. Stewart, J. Patton, Stefan P. Svensson, C. Meaton, D. Lubyshev, A. B. Cornfeld, W. E. Hoke, P. F. Marsh, Joanna Mirecki Millunchick, W. K. Liu, K. Nichols
Publikováno v:
Conference Proceedings. 2000 International Conference on Indium Phosphide and Related Materials (Cat. No.00CH37107).
Metamorphic high electron mobility transistor (MHEMT) structures with In/sub 0.53/Ga/sub 0.47/As channels were grown by molecular beam epitaxy on GaAs substrates using As-, P-, and Sb-based buffer layers. Structural, electrical, and optical character
Autor:
P. F. Marsh, John Shewchun
Publikováno v:
SPIE Proceedings.
Identifies a high-Tc temperature-transition edge, nonbolometric detector response in microstrip line device structures fabricated from thin films of Y1Ba2Cu3O7-x deposited on MgO single crystal substrates. Such detectors have an intrinsically fast re
Autor:
M. Naidenkova, T. R. Stewart, W. E. Hoke, A. B. Cornfeld, X. M. Fang, Dmitri Lubyshev, Stefan P. Svensson, C F Kisielowski, C. S. Whelan, Petra Specht, M. S. Goorsky, J. Mirecki Millunchick, P. F. Marsh, W. K. Liu, X. Xu
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 19:1510
Plastic relaxation in metamorphic high electron mobility transistor (MHEMT) structures was investigated by x-ray reciprocal mapping and high-resolution transmission electron microscopy (HRTEM). X-ray data indicates that In(Ga)AlAs M buffers with a li
Autor:
Edgar. Heckel, P. F. Marsh
Publikováno v:
Analytical Chemistry. 44:2347-2351
Publikováno v:
BMJ (British Medical Journal); September 1999, Vol. 319 Issue: 7213 p807-11, 5p