Výsledky vyhledávání - "P. E. Shepelyavyĭ"

Enhancement of photoluminescence of structures with nanocrystalline silicon stimulated by low-dose irradiation with γ-ray photons

Autor: I. Z. Indutniĭ, P. E. Shepelyavyĭ, M. V. Muravskaya, V. V. Voitovich, I. Lisovskyy, E. G. Gule

Publikováno v: Semiconductors. 42:576-579

The spectra of infrared transmittance and photoluminescence of thin-film nc-Si/SiO2 structures containing nanocrystalline silicon (nc-Si) and subjected to ionizing radiation (60Co) in the dose range D= 104−107 rad are studied. It is shown for the f

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::51fb0cde21e683af4ff135f2ce85d440
https://doi.org/10.1134/s1063782608050151

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Effect of chemical treatment on photoluminescence spectra of SiO x layers with built-in Si nanocrystals

Autor: V. A. Dan’ko, I. Yu. Maĭdanchuk, I. Z. Indutnyy, P. E. Shepelyavyĭ, V. I. Min’ko

Publikováno v: Semiconductors. 41:1248-1254

The effect of chemical treatment in saturated vapors of ammonia and acetone on the spectral composition and intensity of photoluminescence in porous SiO{sub x} films containing Si nanocrystals (nc-Si) is studied. The porosity of the SiO{sub x} films

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::f65b8ac37642495da942eca8c7fb6257
https://doi.org/10.1134/s1063782607100223

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