Zobrazeno 1 - 10
of 10
pro vyhledávání: '"P. E. R. Nordquist"'
Publikováno v:
Journal of Crystal Growth. 141:343-346
Semi-insulating GaAs grown by the vertical zone melting (VZM) method has a low density of etch pits (about (1–4)×103 cm-2), but a low concentration of EL2 (about 7×1015 cm-3). We find that annealing VZM GaAs by either a two-step or by a one-step
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bc59d98355eeb5ec745b73ab53dea9a0
https://doi.org/10.1016/0022-0248(94)90235-6
https://doi.org/10.1016/0022-0248(94)90235-6
Publikováno v:
Journal of Applied Physics. 72:2505-2507
Room temperature measurements are reported of the mid‐infrared local vibrational mode (LVM) absorption caused by CAs acceptors in GaAs. A 30:1 range of carbon content was found among a group of 33 samples of melt‐grown semi‐insulating GaAs. The
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8b5fb6c5103f32bc54a085d62ab57e0a
https://doi.org/10.1063/1.351543
https://doi.org/10.1063/1.351543
Publikováno v:
Journal of Applied Physics. 60:1479-1485
We use infrared reflectance from 400 to 4000 cm−1 to evaluate cubic SiC films grown by chemical vapor deposition on Si substrates. From different regions of the spectra we determine precise film thicknesses, estimate carrier concentrations in highl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8b86a0a810bd4d4c90d25bdf5881b568
https://doi.org/10.1063/1.337275
https://doi.org/10.1063/1.337275
Publikováno v:
Journal of Applied Physics. 51:4861-4869
The conversion of semi‐insulating GaAs to p type as a result of heat treatment in H2 was studied by photoluminescence (PL), secondary‐ion mass spectrometry (SIMS), and transport measurements. The SIMS measurements resulted in the direct chemical
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::67aff4c620b20c1604aec1295b7ad4eb
https://doi.org/10.1063/1.328321
https://doi.org/10.1063/1.328321
Autor:
P. E. R. Nordquist, M. Fatemi
Publikováno v:
Journal of Applied Physics. 61:1883-1890
Defects in β‐SiC films grown on Si substrates by chemical‐vapor deposition have been investigated using x‐ray double‐crystal topography. Varying levels of dislocations are often observed in the form of channels, originating at the SiC/Si int
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::73c03a0a087340a1a3d107b6c0f4c81a
https://doi.org/10.1063/1.338033
https://doi.org/10.1063/1.338033
Publikováno v:
Applied Physics Letters. 52:1695-1697
Measurements of the temperature dependence of N‐Al donor‐acceptor pair photoluminescence spectra in cubic SiC films demonstrate that the thermal activation energy for the nitrogen donors is equivalent to the 54 meV binding energy for nitrogen det
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3ccb9a43fc49ba49433817968ab96f27
https://doi.org/10.1063/1.99021
https://doi.org/10.1063/1.99021
Publikováno v:
Springer Proceedings in Physics ISBN: 9783642750502
Studies of the time decay and power dependence of bound-exciton and donor-acceptor pair (DAP) photoluminescence (PL) have been carried out in n-type undoped and Al-doped films of cubic SiC. The five PL lines or shoulders occuring about 8 meV below th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::10686cf2e4722fa326944921d8fe1afa
https://doi.org/10.1007/978-3-642-75048-9_20
https://doi.org/10.1007/978-3-642-75048-9_20
Autor:
J. A. Freitas, M. L. Gipe, T. A. Kennedy, S. G. Bishop, W. E. Carlos, W. J. Moore, P. E. R. Nordquist
Publikováno v:
Amorphous and Crystalline Silicon Carbide and Related Materials ISBN: 9783642934087
Amorphous and Crystalline Silicon Carbide and Related Materials
Amorphous and Crystalline Silicon Carbide and Related Materials
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4b9babac7fc3ae51100df8d83aaea58e
https://doi.org/10.1007/978-3-642-93406-3_12
https://doi.org/10.1007/978-3-642-93406-3_12
Publikováno v:
Springer Proceedings in Physics ISBN: 9783642750502
Inhomogeneities in the spatial distribution of photoluminescence (PL) intensity in Al-doped films of cubic SiC have been characterized by low temperature photoluminescence imaging. Randomly distributed bright and dark areas in the PL images with char
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::59f92a4ffed8546782bf81a8e3c264ac
https://doi.org/10.1007/978-3-642-75048-9_21
https://doi.org/10.1007/978-3-642-75048-9_21
Publikováno v:
Coordination Chemistry ISBN: 9781489962560
Pfeiffer and co-workers1-3 in an attempt to prepare and resolve complexes of the zinc ion using bidentate ligands encountered an optical anomaly which since has been named the Pfeiffer effect.§ Pfeiffer and Quehl determined the rotation of a 0.04 M
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6fec5a1681395390d07e2d109622a306
https://doi.org/10.1007/978-1-4899-6555-4_5
https://doi.org/10.1007/978-1-4899-6555-4_5