Zobrazeno 1 - 7
of 7
pro vyhledávání: '"P. E. Khakuashev"'
Publikováno v:
Journal of Communications Technology and Electronics. 64:286-288
Permissible deviations of the diffusion depth and selection of the optimal type of epitaxial structures for fabrication of the InGaAs/InP avalanche photodiodes are considered. Two types of structures are presented: (i) with uniform doping of the mult
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f8f417eaf84e43b609dbec5bf4d7bcf2
https://doi.org/10.1134/s1064226919030033
https://doi.org/10.1134/s1064226919030033
Publikováno v:
Journal of Communications Technology and Electronics. 62:1078-1082
The suppression of the early edge breakdown in planar avalanche photodiodes based on the InP/InGaAs heteroepitaxial structures is analyzed. A structure with a sunken central part and shallow periphery fabricated with the aid of wet chemical etching w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::81299301c36a4c9d9a57ec8d37100f2a
https://doi.org/10.1134/s1064226917090042
https://doi.org/10.1134/s1064226917090042
Autor:
I. V. Chinareva, A. A. Marmaluk, I. V. Yarotskaya, Maxim A. Ladugin, P. E. Khakuashev, P. V. Gorlachuk, A. K. Budtolaev, Yu. L. Ryaboshtan
Publikováno v:
Journal of Communications Technology and Electronics. 62:304-308
The influence of parameters of the MOS hydride epitaxy on structural and electrophysical characteristics of InGaAs/InP heterostructures is studied experimentally. The chosen parameters are used to grow device structures and fabricate planar avalanche
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d90273f1258d5d86a9501e51717ad5a9
https://doi.org/10.1134/s1064226917030056
https://doi.org/10.1134/s1064226917030056
Publikováno v:
Journal of Communications Technology and Electronics. 63:306-308
Methods for calculation and control of impurity difference dose Qа during the planar procedure of fabrication of avalanche photodiodes (APDs) based on heteroepitaxial InGaAs/InP structures are presented. The developed methods for the difference dose
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::84f0291d4cc9ba631231b83b1e6558b6
https://doi.org/10.1134/s106422691803004x
https://doi.org/10.1134/s106422691803004x
Publikováno v:
Semiconductors. 34:927-930
Si:(Er,O)-based tunnel light-emitting diodes were fabricated and exhibited the shortest ever recorded characteristic rise time for erbium electroluminescence. This is due to the formation of Er-related centers with an effective excitation cross secti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::772461897d6a1dd149ccdd1d07159fe3
https://doi.org/10.1134/1.1188102
https://doi.org/10.1134/1.1188102
Autor:
A. M. Emel’yanov, K.F. Shtel'makh, M. A. Trishenkov, Yu.A. Nikolaev, P. E. Khakuashev, Nikolai A. Sobolev
Publikováno v:
Journal of Luminescence. 80:315-319
Electroluminescence (EL) characteristics of avalanching silicon diodes fabricated by Er and O co-implantation and subsequent annealing have been studied. Saturation of the Er-related EL intensity is achieved under the avalanche regime at current dens
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7fa4eee99f7818630f928ee9ff6955a5
https://doi.org/10.1016/s0022-2313(98)00118-5
https://doi.org/10.1016/s0022-2313(98)00118-5
Autor:
P. E. Khakuashev, Yu.A. Nikolaev, M. A. Trishenkov, A. M. Emel’yanov, S. V. Gastev, Nikolai A. Sobolev
Publikováno v:
MRS Proceedings. 486
Electroluminescence (EL) characteristics of avalanching diodes fabricated by Er and O co-implantation and subsequent annealing have been studied. Distribution of Er3+-related EL at 1.538 μm was found to be uniform over the device area at 300 K. Satu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::520a7f3a369970f231403977440a4259
https://doi.org/10.1557/proc-486-139
https://doi.org/10.1557/proc-486-139