Zobrazeno 1 - 2
of 2
pro vyhledávání: '"P. E. Hickel"'
Publikováno v:
THE REVIEW OF HIGH PRESSURE SCIENCE AND TECHNOLOGY. 7:1414-1416
The crystal growth of single crystal of α-SiO2 with a low concentration of chemical and physical defects appears an important challenge for the development of high frequency telecommunications [1]. Using the conventional hydrothermal process, with N
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7efbe524558b735e959949e730cea890
https://doi.org/10.4131/jshpreview.7.1414
https://doi.org/10.4131/jshpreview.7.1414
Autor:
P. E. Hickel, Gérard Demazeau, Gérard Villeneuve, F. Bechtel, P. Guibert, R. Arnaud, Rémy Chapoulie, E. Vartanian, B. Capelle
Publikováno v:
High Pressure Research
High Pressure Research, Taylor & Francis, 2000, 18 (1-6), pp.265-269
High Pressure Research, 2000, 18 (1-6), pp.265-269. ⟨10.1080/08957950008200978⟩
High Pressure Research, Taylor & Francis, 2000, 18 (1-6), pp.265-269
High Pressure Research, 2000, 18 (1-6), pp.265-269. ⟨10.1080/08957950008200978⟩
International audience; The development of α-quartz for high frequencies devices leads to a strong reduction of the thickness of the piezoelectric sheet. Such a thickness is comparable to the size of the defects. Consequently, the main objective for
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ebe1aa8bb9832db2b7fb593945ff1ed6
https://hal.archives-ouvertes.fr/hal-02556304
https://hal.archives-ouvertes.fr/hal-02556304
