Zobrazeno 1 - 10
of 163
pro vyhledávání: '"P. Dziawa"'
Publikováno v:
Journal of Spectroscopy, Vol 2024 (2024)
Lead telluride and germanium telluride are well-known IV-VI semiconductors, which is now the focus of research due to the perspective of application as thermoelectrics for midrange temperatures. Solid solutions and heterostructures on this basis, obt
Externí odkaz:
https://doaj.org/article/86bc670a9b63417ba7516201e68a2389
Autor:
Hussain, Ghulam, Cuono, Giuseppe, Dziawa, Piotr, Janaszko, Dorota, Sadowski, Janusz, Kret, Slawomir, Kurowska, Boguslawa, Polaczynski, Jakub, Warda, Kinga, Sattar, Shahid, Canali, Carlo M., Lau, Alexander, Brzezicki, Wojciech, Story, Tomasz, Autieri, Carmine
Publikováno v:
Nanoscale Horizons (2024)
We report on the experimental realization of Pb1-xSnxTe pentagonal nanowires (NWs) with [110] orientation using molecular beam epitaxy techniques. Using first-principles calculations, we investigate the structural stability in NWs of SnTe and PbTe in
Externí odkaz:
http://arxiv.org/abs/2401.03455
The preparation method of thermoelectric PbTe-CdTe semiconductor nanocomposite in the form of a bulk material doped with Bi, I or Na, intended for production the mid-temperature thermoelectric energy generators is presented. The method takes advantag
Externí odkaz:
http://arxiv.org/abs/2212.14616
Autor:
Dad, Sania, Dziawa, Piotr, Zajkowska, Wiktoria, Kret, Sławomir, Kozłowski, Mirosław, Wójcik, Maciej, Sadowski, Janusz
We investigate the full and half-shells of Pb(1-x)Sn(x)Te topological crystalline insulator deposited by molecular beam epitaxy on the sidewalls of wurtzite GaAs nanowires (NWs). Due to the distinct orientation of the IV-VI shell with respect to the
Externí odkaz:
http://arxiv.org/abs/2211.08154
Autor:
Szot, M., Pfeffer, P., Dybko, K., Szczerbakow, A., Kowalczyk, L., Dziawa, P., Minikayev, R., Zayarnyuk, T., Piotrowski, K., Gutowska, M. U., Szewczyk, A., Story, T., Zawadzki, W.
Publikováno v:
Phys. Rev. Materials 4, 044605 (2020)
High quality p-type PbTe-CdTe monocrystalline alloys containing up to 10 at.$\%$ of Cd are obtained by self-selecting vapor transport method. Mid infrared photoluminescence experiments are performed to follow the variation of the fundamental energy g
Externí odkaz:
http://arxiv.org/abs/1911.05387
Publikováno v:
Nanoscale 10, 20772 (2018)
SnTe topological crystalline insulator nanowires have been grown by molecular beam epitaxy on graphene/SiC substrates. The nanowires have cubic rock-salt structure, they grow along [001] crystallographic direction and have four sidewalls consisting o
Externí odkaz:
http://arxiv.org/abs/1812.08888
Autor:
Dybko, K., Mazur, G. P., Wolkanowicz, W., Szot, M., Dziawa, P., Domagala, J. Z., Wiater, M., Wojtowicz, T., Grabecki, G., Story, T.
Weak antilocalization measurements has become a standard tool for studying quantum coherent transport in topological materials. It is often used to extract information about number of conducting channels and dephasing length of topological surface st
Externí odkaz:
http://arxiv.org/abs/1812.08711
Autor:
Polley, Craig M., Buczko, Ryszard, Forsman, Alexander, Dziawa, Piotr, Szczerbakow, Andrzej, Rechciński, Rafał, Kowalski, Bogdan J., Story, Tomasz, Trzyna, Małgorzata, Bianchi, Marco, Čabo, Antonija Grubišić, Hofmann, Philip, Tjernberg, Oscar, Balasubramanian, Thiagarajan
The 'double Dirac cone' 2D topological interface states found on the (001) faces of topological crystalline insulators such as Pb$_{1-x}$Sn$_{x}$Se feature degeneracies located away from time reversal invariant momenta, and are a manifestation of bot
Externí odkaz:
http://arxiv.org/abs/1712.07894
Autor:
Sessi, Paolo, Di Sante, Domenico, Szczerbakow, Andrzej, Glott, Florian, Wilfert, Stefan, Schmidt, Henrik, Bathon, Thomas, Dziawa, Piotr, Greiter, Martin, Neupert, Titus, Sangiovanni, Giorgio, Story, Tomasz, Thomale, Ronny, Bode, Matthias
Publikováno v:
Science 354, 1269 (2016)
Topological crystalline insulators are materials in which the crystalline symmetry leads to topologically protected surface states with a chiral spin texture, rendering them potential candidates for spintronics applications. Using scanning tunneling
Externí odkaz:
http://arxiv.org/abs/1612.07026
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