Zobrazeno 1 - 10
of 2 639
pro vyhledávání: '"P. Di Bartolomeo"'
Autor:
R. Bassan, S. Chiaretti, I. Della Starza, O. Spinelli, A. Santoro, L. Elia, M. S. De Propris, A. M. Scattolin, F. Paoloni, M. Messina, E. Audisio, L. Marbello, E. Borlenghi, P. Zappasodi, C. Vetro, G. Martinelli, D. Mattei, N. Fracchiolla, M. Bocchia, P. De Fabritiis, M. Bonifacio, A. Candoni, V. Cassibba, P. Di Bartolomeo, G. Latte, S. Trappolini, A. Guarini, A. Vitale, P. Fazi, M. Vignetti, A. Rambaldi, R. Foà
Publikováno v:
HemaSphere, Vol 6, Pp 14-15 (2022)
Externí odkaz:
https://doaj.org/article/e14e225c75904d74ab1e2383c1da33d0
Autor:
S. Chiaretti, R. Bassan, A. Vitale, L. Elia, A. Piciocchi, P. Viero, F. Ferrara, M. Lunghi, F. Fabbiano, M. Bonifacio, N. Fracchiolla, P. Di Bartolomeo, P. Fazi, M. S. De Propris, M. Vignetti, A. Guarini, A. Rambaldi, R. Foà
Publikováno v:
HemaSphere, Vol 6, Pp 253-254 (2022)
Externí odkaz:
https://doaj.org/article/a31c41e86ef24fb6b004dc2d30791fe2
Level spectroscopy stands as a powerful method for identifying the transition point that delineates distinct quantum phases. Since each quantum phase exhibits a characteristic sequence of excited states, the crossing of energy levels between low-lyin
Externí odkaz:
http://arxiv.org/abs/2403.07100
Publikováno v:
New J. Phys. 26 043006 (2024)
Collapse models constitute an alternative to quantum mechanics that solve the well-know quantum measurement problem. In this framework, a novel approach to include dissipation in collapse models has been recently proposed, and awaits experimental val
Externí odkaz:
http://arxiv.org/abs/2401.04665
Autor:
Vischi, Michele, Di Bartolomeo, Giovanni, Proietti, Massimiliano, Koudia, Seid, Cerocchi, Filippo, Dispenza, Massimiliano, Bassi, Angelo
Publikováno v:
Phys. Rev. Research 6, 033337, (2024)
Quantum computers are inherently affected by noise. While in the long-term error correction codes will account for noise at the cost of increasing physical qubits, in the near-term the performance of any quantum algorithm should be tested and simulat
Externí odkaz:
http://arxiv.org/abs/2311.10613
We present an efficient algorithm for simulating open quantum systems dynamics described by the Lindblad master equation on quantum computers, addressing key challenges in the field. In contrast to existing approaches, our method achieves two signifi
Externí odkaz:
http://arxiv.org/abs/2311.10009
Autor:
Giacomo Sgalla, Jacopo Simonetti, Arianna Di Bartolomeo, Tonia Magrì, Bruno Iovene, Giuliana Pasciuto, Ruben Dell’Ariccia, Francesco Varone, Alessia Comes, Paolo Maria Leone, Venere Piluso, Alessandro Perrotta, Giuseppe Cicchetti, Diana Verdirosi, Luca Richeldi
Publikováno v:
Respiratory Research, Vol 25, Iss 1, Pp 1-11 (2024)
Abstract Background Although crackles on chest auscultation represent a fundamental component of the diagnostic suspect for fibrotic interstitial lung disease (ILD), their reliability has not been properly studied. We assessed the agreement among res
Externí odkaz:
https://doaj.org/article/47593c4975e946a8bea823fc79056a79
Autor:
Schetinger, Victor, Di Bartolomeo, Sara, de Lima, Edirlei Soares, Meinecke, Christofer, Rosa, Rudolf
This paper presents a novel exploration of the interaction between generative AI models, visualization, and narrative generation processes, using OpenAI's GPT as a case study. We look at the question "Where Does Generativeness Comes From", which has
Externí odkaz:
http://arxiv.org/abs/2308.06266
Autor:
Urban, F., Giubileo, F., Grillo, A., Iemmo, L., Luongo, G., Passacantando, M., Foller, T., Madauß, L., Pollmann, E., Geller, M. P., Oing, D., Schleberger, M., Di Bartolomeo, A.
Publikováno v:
2019 2D Materials 6 045049
We study the effect of electric stress, gas pressure and gas type on the hysteresis in the transfer characteristics of monolayer molybdenum disulfide (MoS2) field effect transistors. The presence of defects and point vacancies in the MoS2 crystal str
Externí odkaz:
http://arxiv.org/abs/2306.15353
Autor:
Sleziona, Stephan, Pelella, Aniello, Faella, Enver, Kharsah, Osamah, Skopinski, Lucia, Maas, Andre, Liebsch, Yossarian, Di Bartolomeo, Antonio, Schleberger, Marika
Field-effect transistors based on molybdenum disulfide (MoS$_2$) exhibit a hysteresis in their transfer characteristics, which can be utilized to realize 2D memory devices. This hysteresis has been attributed to charge trapping due to adsorbates, or
Externí odkaz:
http://arxiv.org/abs/2306.04493