Zobrazeno 1 - 7
of 7
pro vyhledávání: '"P. D. Lomenzo"'
Autor:
R. Alcala, M. Materano, P. D. Lomenzo, L. Grenouillet, T. Francois, J. Coignus, N. Vaxelaire, C. Carabasse, S. Chevalliez, F. Andrieu, T. Mikolajick, U. Schroeder
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 10, Pp 907-912 (2022)
Si doped HfO2 based ferroelectric capacitors integrated into Back-End-Of-Line (BEOL) 130 nm CMOS technology were investigated in regard to critical reliability parameters for their implementation in non-volatile one-transistor one-capacitor ferroelec
Externí odkaz:
https://doaj.org/article/b30337593a644526807ec901895369a8
Autor:
Roberto Guido, Haidong Lu, Patrick D. Lomenzo, Thomas Mikolajick, Alexei Gruverman, Uwe Schroeder
Publikováno v:
Advanced Science, Vol 11, Iss 16, Pp n/a-n/a (2024)
Abstract Ferroelectric wurtzite‐type aluminum scandium nitride (Al1−xScxN) presents unique properties that can enhance the performance of non‐volatile memory technologies. The realization of the full potential of Al1−xScxN requires a comprehe
Externí odkaz:
https://doaj.org/article/bac153d85d1c4f2fb1809fc2bf713d5b
Autor:
T. Mittmann, M. Materano, P. D. Lomenzo, M. H. Park, I. Stolichnov, M. Cavalieri, C. Zhou, J. L. Jones, T. Szyjka, M. Müller, A. Kersch, T. Mikolajick, U. Schroeder
Thin lm metal–insulator–metal capacitors with undoped HfO2 as the insulator are fabricated by sputtering from ceramic targets and subsequently annealed. The in uence of lm thickness and annealing temperature is characterized by electrical and str
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c20e2cd485db061ef4e2b893083dc262
Article type: Full Paper Origin of ferroelectric phase in undoped HfO2 films deposited by sputtering
Autor:
T Mittmann, M Materano, P D Lomenzo, M H Park, I Stolichnov, M Cavalieri, C Zhou, J L Jones, T Szyjka, M Müller, A Kersch, T Mikolajick, U Schroeder
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::69bcbbde048478fa9d67fe2363a02e8b
Autor:
José P. B. Silva, Ruben Alcala, Uygar E. Avci, Nick Barrett, Laura Bégon-Lours, Mattias Borg, Seungyong Byun, Sou-Chi Chang, Sang-Wook Cheong, Duk-Hyun Choe, Jean Coignus, Veeresh Deshpande, Athanasios Dimoulas, Catherine Dubourdieu, Ignasi Fina, Hiroshi Funakubo, Laurent Grenouillet, Alexei Gruverman, Jinseong Heo, Michael Hoffmann, H. Alex Hsain, Fei-Ting Huang, Cheol Seong Hwang, Jorge Íñiguez, Jacob L. Jones, Ilya V. Karpov, Alfred Kersch, Taegyu Kwon, Suzanne Lancaster, Maximilian Lederer, Younghwan Lee, Patrick D. Lomenzo, Lane W. Martin, Simon Martin, Shinji Migita, Thomas Mikolajick, Beatriz Noheda, Min Hyuk Park, Karin M. Rabe, Sayeef Salahuddin, Florencio Sánchez, Konrad Seidel, Takao Shimizu, Takahisa Shiraishi, Stefan Slesazeck, Akira Toriumi, Hiroshi Uchida, Bertrand Vilquin, Xianghan Xu, Kun Hee Ye, Uwe Schroeder
Publikováno v:
APL Materials, Vol 11, Iss 8, Pp 089201-089201-70 (2023)
Ferroelectric hafnium and zirconium oxides have undergone rapid scientific development over the last decade, pushing them to the forefront of ultralow-power electronic systems. Maximizing the potential application in memory devices or supercapacitors
Externí odkaz:
https://doaj.org/article/bdc8e7ac6d8a4918bcd408390bfda1b5
Publikováno v:
Frontiers in Nanotechnology, Vol 5 (2023)
Externí odkaz:
https://doaj.org/article/446a49285ae0442c9f36fbad5ab0abec
Autor:
Suzanne Lancaster, Patrick D. Lomenzo, Moritz Engl, Bohan Xu, Thomas Mikolajick, Uwe Schroeder, Stefan Slesazeck
Publikováno v:
Frontiers in Nanotechnology, Vol 4 (2022)
A measurement technique is presented to quantify the polarization loss in ferroelectric thin films as a function of delay time during the first 100s after switching. This technique can be used to investigate charge trapping in ferroelectric thin film
Externí odkaz:
https://doaj.org/article/256c33b1aa424843b58a853c6579a308