Zobrazeno 1 - 10
of 10
pro vyhledávání: '"P. D. Kirchner"'
Autor:
E. Le Meur, M. Sacchettini, S. Garambois, E. Berthier, A. S. Drouet, G. Durand, D. Young, J. S. Greenbaum, J. W. Holt, D. D. Blankenship, E. Rignot, J. Mouginot, Y. Gim, D. Kirchner, B. de Fleurian, O. Gagliardini, F. Gillet-Chaulet
Publikováno v:
The Cryosphere, Vol 8, Iss 4, Pp 1331-1346 (2014)
The grounding line is a key element of coastal outlet glaciers, acting on their dynamics. Accurately knowing its position is fundamental for both modelling the glacier dynamics and establishing a benchmark for later change detection. Here we map the
Externí odkaz:
https://doaj.org/article/fc25def9b4dc478b8640cfa6047f9b41
Autor:
I. M. Vitomirov, A. Raisanen, S. Chang, R. E. Viturro, L. J. Brillson, D. F. Rioux, P. D. Kirchner, G. D. Pettit, J. M. Woodall
Publikováno v:
Journal of Electronic Materials. 22:111-117
Effects of substrate doping and growth method on interface deep level formation and Schottky barrier height were investigated using low-energy catho doluminescence and soft x-ray photoemission spectroscopy. Our results reveal that for Au/GaAs(100) co
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::36671d0771385c89353edc352c7f3244
https://doi.org/10.1007/bf02665732
https://doi.org/10.1007/bf02665732
Publikováno v:
Surface and Interface Analysis. 19:301-308
The technique of subpicosecond angle-resolved laser photoemission spectroscopy is described. Investigations of the dynamics of electrons excited into normally unoccupied states at the cleaved GaAs (110) 1 x 1 and Ge (111) 2 x 1 surfaces are detailed.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7056413be30caedcb9e1fc46981412c2
https://doi.org/10.1002/sia.740190157
https://doi.org/10.1002/sia.740190157
Publikováno v:
Journal of Applied Physics. 71:4230-4243
Compositionally graded films of SiGe/Si(100) and GaInAs/GaAs were grown under different conditions in order to investigate the different modes of strain relaxation associated with the compositional grading. We show that, when the growth conditions ar
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c8e5f0de243a95651a8ba9a4d64d31d5
https://doi.org/10.1063/1.350803
https://doi.org/10.1063/1.350803
Autor:
David R. Clarke, P. D. Kirchner, M. C. Kroll, T. R. Dinger, George M. Pharr, Warren C. Oliver, Robert F. Cook
Publikováno v:
Journal of Materials Research. 7:961-972
The effects of indentation on the electrical resistance of rectifying gold-chromium contacts on silicon and germanium have been studied using nanoindentation techniques. The DC resistance of circuits consisting of positively and negatively biased con
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8b3be12fb03b5d9ed3b19e28b0c9ecfb
https://doi.org/10.1557/jmr.1992.0961
https://doi.org/10.1557/jmr.1992.0961
Publikováno v:
Physical Review Letters. 68:831-834
The line shape of the Al 2p core-level photoemission peak in Al 0.9 Ga 0.1 As is found to be strongly dependent on the electron kinetic energy. Using Monte Carlo transport simulations it is shown that the observed strong, asymmetric line broadening i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9fd031ec4a8dcf1594b8846b3caf44c8
https://doi.org/10.1103/physrevlett.68.831
https://doi.org/10.1103/physrevlett.68.831
Publikováno v:
Applied Physics Letters. 59:2865-2867
Highly carbon‐doped, highly p‐type Ga0.5In0.5As and Ga0.5In0.5P epilayers were grown by gas‐source molecular beam epitaxy (GSMBE) using carbon tetrachloride (CCl4). Growth temperatures slightly below conventional values were used to increase th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c5ca8327e56f60c352d08e13a9e88f76
https://doi.org/10.1063/1.105835
https://doi.org/10.1063/1.105835
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 10:2046
The line shape of the Al 2p core‐level photoemission peak in Al0.9Ga0.1As is found to be strongly dependent on the electron kinetic energy. Using Monte Carlo transport simulations it is shown that the observed strong, asymmetric line broadening is
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f9854d60f383e7845f4a4f6b1ed9c61d
https://doi.org/10.1116/1.586315
https://doi.org/10.1116/1.586315
Publikováno v:
Physical Review Letters. 60:2176-2179
The scanning tunneling microscope (STM) has been used to study the $(2\ifmmode\times\else\texttimes\fi{}4)\ensuremath{-}c(2\ifmmode\times\else\texttimes\fi{}8)$ reconstruction on the arsenic-rich surface of GaAs(001). The STM images show that the 4\i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7408d6a0017cfa9055ccfc23aaf9e5df
https://doi.org/10.1103/physrevlett.60.2176
https://doi.org/10.1103/physrevlett.60.2176
Publikováno v:
Physical review letters. 60(21)
We report the observation, by transmission electron microscopy, that single-crystal silicon and germanium are converted to an amorphous state at room temperature directly under both Vickers and Knoop indentations. The effect is seen for crystal orien
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::817efb07d67d00fde355ec3843a4b06c
https://pubmed.ncbi.nlm.nih.gov/10038274
https://pubmed.ncbi.nlm.nih.gov/10038274