Zobrazeno 1 - 10
of 265
pro vyhledávání: '"P. Cserháti"'
Autor:
Arkadii Bikbashev, Tomáš Stryšovský, Martina Kajabová, Zuzana Kovářová, Robert Prucek, Aleš Panáček, Josef Kašlík, Tamás Fodor, Csaba Cserháti, Zoltán Erdélyi, Libor Kvítek
Publikováno v:
Molecules, Vol 29, Iss 20, p 4838 (2024)
Nickel oxide (NiO) is one of the most popular hydrogenation catalysts. In heterogeneous catalysis, nickel oxide is used, for example, as a suitable methanation catalyst in the Fischer–Tropsch reaction not only for CO hydrogenation but also in the m
Externí odkaz:
https://doaj.org/article/45f7bfd39bb1425aae1cf89a27c524ff
Autor:
Tikhonov, Alexey, Malkhasov, Alex, Manoshin, Andrey, Dima, George, Cserháti, Réka, Asif, Md. Sadek Hossain, Sárdi, Matt
Motivated by the sparsity of NLP resources for Eastern European languages, we present a broad index of existing Eastern European language resources (90+ datasets and 45+ models) published as a github repository open for updates from the community. Fu
Externí odkaz:
http://arxiv.org/abs/2108.02605
Autor:
Fodor Amelita, Naszlady Márton Bese, Mravcsik Mariann, Klauber Andras, Cserháti Peter, Laczko Jozsef, Horváth Mónika
Publikováno v:
Current Directions in Biomedical Engineering, Vol 8, Iss 3, Pp 29-32 (2022)
Introduction: The results of two spiroergometric measurements are presented that were taken from a spinal cord injured patient who participated in FES cycling training sessions for 11 months. Methods: The two measurements were taken 4 and 11 months a
Externí odkaz:
https://doaj.org/article/ce043f7d036f486e966d82f5f1ef28ee
Autor:
A. Kodentsov, C. Cserháti
Publikováno v:
Archives of Metallurgy and Materials, Vol vol. 67, Iss No 3, Pp 1007-1020 (2022)
Gaseous nitriding of binary Ni-Cr solid-solution alloys was studied at 1125ºC over the range 1 to 6000 bar of N2-pressure. At the specified temperature the nitriding response of the Ni-Cr alloys depends on the Cr-content in the initial alloy and act
Externí odkaz:
https://doaj.org/article/6c1271c398994958a469885ce8e43f21
Autor:
Szilasi, S. Z., Cserhati, C.
Although, poly(dimethylsiloxane) (PDMS) is a widely used material in numerous applications, such as micro- or nanofabrication, the method of its selective etching has not been known up to now. In this work authors present two methods of etching the p
Externí odkaz:
http://arxiv.org/abs/1712.03125
Mysteries in binary phase diagram are still in existence, e.g., the case in Cu-Ni which is mutual miscible system, the question addressed that "Indirect experimental evidence indicates the presence of a miscibility gap in the fcc phase at a temperatu
Externí odkaz:
http://arxiv.org/abs/1710.10125
Diffusion couples Zn/CuxTiy were prepared by the melting contact method and then annealed at 663K for various times. Using scanning electron microscopy (SEM) with energy dispersive X-ray spectroscopy (EDS), we discovered 7 new systems, i.e. Zn/Cu9Ti,
Externí odkaz:
http://arxiv.org/abs/1701.01594
Autor:
Viktor R. Paczona, MD, Marta E. Capala, MD, PhD, Borbála Deák-Karancsi, MD, Emőke Borzási, MD, Zsófia Együd, MD, Zoltán Végváry, MD, Gyöngyi Kelemen, MD, PhD, Renáta Kószó, MD, PhD, László Ruskó, PhD, Lehel Ferenczi, MScEng, Gerda M. Verduijn, MD, Steven F. Petit, PhD, Judit Oláh, MD, PhD, DSC, Adrienne Cserháti, MD, Florian Wiesinger, PhD, Katalin Hideghéty, MD, PhD
Publikováno v:
Advances in Radiation Oncology, Vol 8, Iss 2, Pp 101042- (2023)
Purpose: The aim of this article is to establish a comprehensive contouring guideline for treatment planning using only magnetic resonance images through an up-to-date set of organs at risk (OARs), recommended organ boundaries, and relevant suggestio
Externí odkaz:
https://doaj.org/article/a265aa01f84746b7b370a3b099a98725
The existence of the miscibility gap in the Cu-Ni system has been an issue in both computational and experimental discussions for half a century [Chakrabarti et al., Phase diagrams of binary nickel alloys, ASM, 1991]. Here we propose a new miscibilit
Externí odkaz:
http://arxiv.org/abs/1611.07068
Autor:
S. Gurbán, A. Sulyok, Miklos Menyhárd, E. Baradács, B. Parditka, C. Cserháti, G. A. Langer, Z. Erdélyi
Publikováno v:
Scientific Reports, Vol 11, Iss 1, Pp 1-10 (2021)
Abstract Interface induced diffusion had been identified in a thin film system damaged by electron bombardment. This new phenomenon was observed in Al2O3 (some nm thick)/Si substrate system, which was subjected to low energy (5 keV) electron bombardm
Externí odkaz:
https://doaj.org/article/3545bf594a86481da63fdb6c61cf15f2