Zobrazeno 1 - 10
of 930
pro vyhledávání: '"P. Clauws"'
Publikováno v:
Frontiers in Psychology, Vol 12 (2021)
Words that share form and meaning across two or more languages (i.e., cognates) are generally processed faster than control words (non-cognates) by bilinguals speaking these languages. This so-called cognate effect is considered to be a demonstration
Externí odkaz:
https://doaj.org/article/b1ad00fa9d794b21bbb9d5e268475c1b
Autor:
Maya Danneels, Ruth Van Hecke, Laura Leyssens, Leen Maes, Hilde Van Waelvelde, Frederik J A Deconinck, Jan R Wiersema, Chloe Clauws, Ingeborg Dhooge
Publikováno v:
BMJ Open, Vol 11, Iss 6 (2021)
Introduction The involvement of the vestibular system in the motor and higher (cognitive) performances of typically developing or vestibular-impaired children is currently unknown or has only scarcely been explored. Interestingly, arguments for an in
Externí odkaz:
https://doaj.org/article/a30105325ccc4da5aa33cb51ccb63926
Akademický článek
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Akademický článek
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Publikováno v:
Journal of End-to-End-testing. 404:4529-4532
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::369f023066cfbb90b2afbb022117aa03
https://doi.org/10.1016/s9999-9994(09)20495-8
https://doi.org/10.1016/s9999-9994(09)20495-8
Publikováno v:
Thin Solid Films. :434-438
The presence of deep defects in CdS/CdTe thin film solar cells strongly affects the electrical properties and as a result the performance of the cells. Therefore, it is desirable to understand the role of these defect states. This paper describes the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::976f90b09f57a1ea8d08ae6d669f01a0
https://doi.org/10.1016/j.tsf.2003.10.137
https://doi.org/10.1016/j.tsf.2003.10.137
Publikováno v:
Journal of Applied Physics. 82:1696-1699
The electrical effects of reactive ion etching (RIE) of p-InP by CH4:H2 are investigated. By using optical deep-level transient spectroscopy, several deep-level defects could be detected. The main defect (E3) is found to be a donor with an energy lev
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::985cd090ec75ba574c13e65a9adc9f50
https://doi.org/10.1063/1.365969
https://doi.org/10.1063/1.365969
Autor:
H. Ohyama, J. Vanhellemont, Y. Takami, K. Hayama, H. Sunaga, J. Poortmans, M. Caymax, P. Clauws
Publikováno v:
Materials Science and Technology. 11:429-435
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6ff53cba19bdeb10d397a10c358a8179
https://doi.org/10.1179/026708395790165011
https://doi.org/10.1179/026708395790165011
Autor:
L. Adams, B. Johlander, Eugenijus Gaubas, Eddy Simoen, C. Claeys, A. Kaniava, Jan Vanhellemont, Gijs Bosman, P. Clauws
Publikováno v:
IEEE Transactions on Nuclear Science. 41:1924-1931
The electrical activity of MeV particle irradiation induced lattice defects in silicon, is studied through their impact on diode characteristics and on minority carrier lifetime. For the first time results are presented on low-frequency noise spectro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3b92cc5a8e9110dbf955b5ffb49a5d37
https://doi.org/10.1109/23.340525
https://doi.org/10.1109/23.340525
Autor:
Matty Caymax, Jan Vanhellemont, J. Poortmans, Hiromi Sunaga, Y. Takami, Hidenori Ohyama, P. Clauws, Kiyoteru Hayama
Publikováno v:
IEEE Transactions on Nuclear Science. 41:2437-2442
The irradiation damage in n/sup +/-Si/p/sup +/-Si/sub 1-x/Ge/sub x/ epitaxial diodes and n/sup +/-Si/p/sup +/-Si/sub 1-x/Ge/sub x//n-Si epitaxial heterojunction bipolar transistors (HBTs) by fast neutrons and MeV electrons is studied as a function of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::748bae1da44c9491dd07459dc893ae17
https://doi.org/10.1109/23.340599
https://doi.org/10.1109/23.340599