Zobrazeno 1 - 7
of 7
pro vyhledávání: '"P. C. van der Wilt"'
Autor:
H.K. Effron, P. C. van der Wilt, A. M. Chitu, James S. Im, Ui-Jin Chung, A. B. Limanov, B. A. Turk, G.S. Ganot
Publikováno v:
MRS Proceedings. 1426:389-394
In this paper, we present experimental findings pertaining to the formation of twins in isolated single-crystal islands obtained via the dot-SLS method. Systematic characterization of the islands using EBSD reveals that Σ = 3 CSL twins constitute th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ef3fe617da88cd2f3267672f8dae3512
https://doi.org/10.1557/opl.2012.1179
https://doi.org/10.1557/opl.2012.1179
Publikováno v:
MRS Proceedings. 1426:257-262
We have investigated the effect of varying the film thickness on the surface orientation texturing in polycrystalline Si films obtained via mixed-phase solidification (MPS) of initially a-Si precursor films on SiO2. It is found that, for a given numb
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d3156d16043e02cd9965bbba2c2f8a46
https://doi.org/10.1557/opl.2012.1400
https://doi.org/10.1557/opl.2012.1400
Autor:
Monica Chahal, P. C. van der Wilt, K. Ohmori, A. B. Limanov, Ui-Jin Chung, Naoyuki Kobayashi, G.S. Ganot, James S. Im, A. M. Chitu
Publikováno v:
Journal of Crystal Growth. 312:2775-2778
Mixed-phase solidification (MPS) is a new beam-induced solidification method that can produce large-grained and highly (1 0 0)-surface textured polycrystalline Si films on SiO2. The grains resulting from this mixed-phase solidification (MPS) method,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::01ad14539fba66a54e26aa13b6dd4dc6
https://doi.org/10.1016/j.jcrysgro.2010.05.037
https://doi.org/10.1016/j.jcrysgro.2010.05.037
Autor:
Jihui Lee, James S. Im, P. C. van der Wilt, John R. Abelson, L. Goodman, M.G. Kane, Arthur H. Firester, A. B. Limanov, A. M. Chitu
Publikováno v:
MRS Bulletin. 31:461-465
Low-defect-density polycrystalline Si on flexible substrates can be instrumental in realizing the full potential of macroelectronics. Direct deposition or solid-phase crystallization techniques are often incompatible with polymers and produce materia
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::87f9aad342ab90527f07e219e6b4177c
https://doi.org/10.1557/mrs2006.119
https://doi.org/10.1557/mrs2006.119
A hybrid approach for obtaining orientation-controlled single-crystal Si regions on glass substrates
Publikováno v:
Photon Processing in Microelectronics and Photonics V.
We have previously shown that location-controlled single-crystal regions can be obtained by implementing a version of the sequential lateral solidification process referred to as dot-SLS. Performed on an amorphous Si precursor, however, the process r
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8a53e97cac0efa4cae9609a200bbe551
https://doi.org/10.1117/12.651139
https://doi.org/10.1117/12.651139
Publikováno v:
MRS Proceedings. 979
Thin Si films on SiO2 that are completely melted by pulsed laser irradiation cool rapidly and eventually solidify via nucleation and growth of solids. It has been observed that a variety of solidified microstructures can be obtained, depending primar
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4436864a08fd89a333ebfb86e340e5a0
https://doi.org/10.1557/proc-979-0979-hh11-22
https://doi.org/10.1557/proc-979-0979-hh11-22
Autor:
Chi-Lin Chen, Yu-Cheng Chen, James S. Im, A. M. Chitu, A. B. Limanov, Chi-Ming Chang, Hisng-Hua Wu, P. C. van der Wilt, Jia-Xing Lin, Hung-Tse Chen
Publikováno v:
2005 IEEE LEOS Annual Meeting Conference Proceedings.
Single-pulse excimer-laser-induced enhancement of lateral crystallization by applying a heat-retaining capping layer on amorphous silicon is well confirmed. Through analysis of polycrystalline silicon microstructure and of transient reflectance signa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6377e2a65e30d77ca8d75c8610be70e3
https://doi.org/10.1109/leos.2005.1548312
https://doi.org/10.1109/leos.2005.1548312