Zobrazeno 1 - 10
of 45
pro vyhledávání: '"P. C. Euthymiou"'
Autor:
G. E. Zardas, Ch.I. Symeonides, P. C. Euthymiou, Panayiotis H. Yannakopoulos, M. Vesely, G.J. Papaioannou
Publikováno v:
Solid State Communications. 145:332-336
The aim of the present work is to investigate defects that are introduced to Gallium Phosphide (GaP) by electron irradiation as well as their dependence on the background doping. Undoped and Te doped n-type GaP have been irradiated with 1.5 MeV elect
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aef484482bcd3e4e4a91218326745c71
https://doi.org/10.1016/j.ssc.2007.12.003
https://doi.org/10.1016/j.ssc.2007.12.003
Autor:
Panayiotis H. Yannakopoulos, O. Csabay, Chrys I. Symeonides, G. E. Zardas, P. C. Euthymiou, M. Ziska
Publikováno v:
Microelectronics Journal. 36:1-4
We investigated the photoconductivity of GaAs:Si epilayer on SI-GaAs specimens. We measured the current from the time we switched on the illumination and after switching it off as a function of time at various temperatures from 250 to 330 K. A small
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::38d876ea8097d3fa594151ed10f8a300
https://doi.org/10.1016/j.mejo.2004.10.011
https://doi.org/10.1016/j.mejo.2004.10.011
Publikováno v:
Microelectronics Journal. 39:737-739
The aim of the present work is to study the density of electron transitions inside the energy gap of SI-GaAs at various temperatures and under @a-particle irradiation at 300K. The photocurrent as a function of photon energy from 1.35 to 1.80eV, for e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3276d8e1632cf3b24d16756d149e3d96
https://doi.org/10.1016/j.mejo.2007.12.024
https://doi.org/10.1016/j.mejo.2007.12.024
Autor:
Panayiotis H. Yannakopoulos, M. Vesely, P. C. Euthymiou, G. E. Zardas, M. Ziska, Chr. Symeonides
Publikováno v:
Microelectronics Journal. 37:91-93
In the present work, we study the Energy gap ( E g ) of the Si–GaAs at various temperatures in the range from 250 up to 350 K, using the photoconductivity method, in order to find the relation between the E g and the temperature. We have measured t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c9e42e6f52f1dc7c35701c17e37b25cf
https://doi.org/10.1016/j.mejo.2005.04.056
https://doi.org/10.1016/j.mejo.2005.04.056
Autor:
T. A. Kuzemchenko, V.S. Vavilov, P.D. Bekris, S. Yu. Sokolov, D. L. Khavroshin, C.D. Kourkoutas, M.V. Chukichev, G. N. Galkin, L. K. Vodopyanov, R. R. Resvanov, E. A. Bobrova, Yu. A. Aleshchenko, A. E. Kiv, P. C. Euthymiou
Publikováno v:
Radiation Effects and Defects in Solids. 125:323-331
New experimental data are presented which indicate the change of defect centers concentration in GaAs at macroscopic (up to millimeters) distances from the implanted regions edge. These data were obtained by locally exited cathodoluminescence, by obs
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1cfa7155b0c286fd6008736bdad8e1de
https://doi.org/10.1080/10420159308220210
https://doi.org/10.1080/10420159308220210
Effect of α-Particle Irradiation on AlGaAs/GaAs Planar Photoconductive Detectors at Low Temperatures
Publikováno v:
Physica Status Solidi (a). 133:K49-K52
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c39bfff9051db4311b84e4ec5702657a
https://doi.org/10.1002/pssa.2211330129
https://doi.org/10.1002/pssa.2211330129
Publikováno v:
Physica Status Solidi (a). 123:K79-K82
Etude des changements des caracteristiques courant-tension de ce materiau, prises a de faibles valeurs de U ds et a differentes temperatures de 100 a 294 K, apres irradiation avec des particules α de 2,84 MeV a 100 K
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d48a7050c19d6f33323d4e60ec0434b3
https://doi.org/10.1002/pssa.2211230153
https://doi.org/10.1002/pssa.2211230153
Publikováno v:
Physics-Uspekhi. 42:199-201
Evidence for persistent photoconductivity, i.e., electrical conductivity changes existing for a very long time after the excitation of nonmetallic solids by photons, was furnished back in the 19th century and put to practice even before modern solid-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f2e264b96ab876d8ef321db07a9bf159
https://doi.org/10.1070/pu1999v042n02abeh000589
https://doi.org/10.1070/pu1999v042n02abeh000589
Publikováno v:
Solid State Communications. 74:305-308
DLTS studies on as grown Czochralski n -type GaP : Te show peaks corresponding to electron activation of 0.205, 0.485, 0.65 and 0.567 eV. After irradiation by 1 MeV electrons at room temperature two new levels are found at 0.248 and 0.329 eV and the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5a154631d1f71fbf05d22692ef34da2c
https://doi.org/10.1016/0038-1098(90)90191-d
https://doi.org/10.1016/0038-1098(90)90191-d
Publikováno v:
Solid State Communications. 80:321-323
The influence of the electron and hole traps, introduced by electron irradiation, on the drift mobility and carrier concentration profiles of the GaAs epitaxial layer structure was investigated. The DLTS and DLOS measurements indicated three electron
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::13f56531b0728844fefa88736c175f97
https://doi.org/10.1016/0038-1098(91)90138-l
https://doi.org/10.1016/0038-1098(91)90138-l