Zobrazeno 1 - 10
of 20
pro vyhledávání: '"P. C. Colter"'
Publikováno v:
Applied Physics Letters. 121:052104
Tunnel junctions (TJs) have recently been proposed as a solution for several III-nitride current problems and to enhance new structures. Reported III-nitride TJs grown by metalorganic chemical vapor deposition (MOCVD) resulted in backward diodes with
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::97abfa77d2c8cd255aec1a79c2d471f3
https://doi.org/10.1063/5.0103152
https://doi.org/10.1063/5.0103152
Autor:
Jason E Ekert, Kjell Johnson, Brandy Strake, Jose Pardinas, Stephen Jarantow, Robert Perkinson, David C Colter
Publikováno v:
PLoS ONE, Vol 9, Iss 3, p e92248 (2014)
Three-dimensional (3D) cell culture is gaining acceptance in response to the need for cellular models that better mimic physiologic tissues. Spheroids are one such 3D model where clusters of cells will undergo self-assembly to form viable, 3D tumor-l
Externí odkaz:
https://doaj.org/article/c2dee24fa1da47daae45faf850cab628
Autor:
Y. C. Lee, Zainuriah Hassan, W. Halverson, Martin E. Kordesch, P. C. Colter, Fong Kwong Yam, K. Ibrahim
Publikováno v:
Solid State Communications. 133:283-287
In this paper, we report on the characteristics of GaN films grown on Si(111) at a low temperature (200 °C) by electron cyclotron resonance (ECR) plasma-assisted metalorganic chemical vapor deposition (PA-MOCVD). Structural analysis of the GaN films
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5be11902be602b58cd66b561bbf20e31
https://doi.org/10.1016/j.ssc.2004.11.022
https://doi.org/10.1016/j.ssc.2004.11.022
Autor:
A. Kussmaul, S. Vernon, P. C. Colter, R. Sudharsanan, A. Mastrovito, K. J. Linden, N. H. Karam, S. C. Warnick, M. A. Dahleh
Publikováno v:
Journal of Electronic Materials. 26:1145-1153
We have used spectroscopic ellipsometry to perform real-time monitoring during metalorganic chemical vapor deposition growth of AlGaAs (on GaAs) and InGaAs (on GaAs and InP). Optical constants for these materials were obtained up to growth temperatur
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0919548b4ca68b69352f85b79892fa53
https://doi.org/10.1007/s11664-997-0011-1
https://doi.org/10.1007/s11664-997-0011-1
Publikováno v:
Journal of Applied Physics. 67:7144-7146
We have used a scanning tunneling microscope to locally modify thin oxide films on silicon. Current‐voltage (I‐V) measurements were performed on these samples and compared with those on ‘‘as‐polished’’ (mechanically and chemically polis
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::798d219d115d68fb30ab0da28ac20112
https://doi.org/10.1063/1.344539
https://doi.org/10.1063/1.344539
Autor:
M. E. Kordesch, H. J. Lozykowski, Zainuriah Hassan, W. Halverson, P. C. Colter, W. M. Jadwisienzak
Publikováno v:
Scopus-Elsevier
Web of Science
Web of Science
GaN films have been deposited over a range of temperatures from 50 C to 650 C by ECR plasma MOCVD on silicon (111) and (100), sapphire and quartz using triethylgallium and molecular nitrogen or ammonia as reagents. Growth rates of 2 um/hr are achieve
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1991dd70c76769226202982dc3a3571e
https://doi.org/10.1557/proc-536-245
https://doi.org/10.1557/proc-536-245
Publikováno v:
Solid State Communications. 48:51-54
Spectroscopic transitions originating on negatively charged donor ions (D- states) are observed in far-infrared magneto-optic experiments with n-GaAs and compared with transitions originating from the ground state of the neutral donors, those linking
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fa36b184f31b14e989b8dfcc4025d0b2
https://doi.org/10.1016/0038-1098(83)90181-3
https://doi.org/10.1016/0038-1098(83)90181-3
Publikováno v:
Journal of Electronic Materials. 12:223-234
Studies of the grown-in deep level defects vs substrate orientation and gas phase stoichiometry in the VPE GaAs grown by a novel Ga/AsCl3/H2 reactor has been made, using DLTS and C-V methods. Density of electron traps vs Ga/As ratio (i.e., 2/1, 3/1,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fc68781066db17df6a8a7797a85a10a3
https://doi.org/10.1007/bf02651644
https://doi.org/10.1007/bf02651644
Publikováno v:
Le Journal de Physique Colloques. 39:C6-955
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::46f5040dadac687b0c35e9e8102d6894
https://doi.org/10.1051/jphyscol:19786423
https://doi.org/10.1051/jphyscol:19786423
Publikováno v:
Journal of Applied Physics. 55:1610-1613
Three residual donors (Si, S, Ge) and three residual acceptors (Ge, C, Zn) have been identified simultaneously in a p‐type GaAs crystal. The donors were identified by the magneto‐optical photoluminescent spectroscopy technique. The Si donor has a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bbe47354f3580ba53eb1e94e591347a2
https://doi.org/10.1063/1.333422
https://doi.org/10.1063/1.333422