Zobrazeno 1 - 10
of 45
pro vyhledávání: '"P. Blanconnier"'
Publikováno v:
Microelectronic Engineering. 15:161-164
A self-aligned GaAlAs/GaAs HBT technology with tungsten emitter and base ohmic contacts is presented. The HBT's layers are grown by MBE, the emitter contact layer is Ga 0.35 In 0.65 As. A Zinc diffusion allows for contacting the extrinsic base layer.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ca96026f56838d822411062897812fdb
https://doi.org/10.1016/0167-9317(91)90204-q
https://doi.org/10.1016/0167-9317(91)90204-q
Publikováno v:
Journal of The Electrochemical Society. 137:1514-1519
A study of the properties of As-doped and undoped GeMoW contacts prepared by different annealing techniques leads to the optimization of a new refractory ohmic contact consisting of an As-doped Ge-layer deposited by electron beam evaporation and sput
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4caf73d6cb7861aa10c86e7711ebdd63
https://doi.org/10.1149/1.2086703
https://doi.org/10.1149/1.2086703
Autor:
J.P. Praseuth, E. Caquot, L. Nguyen, P. Blanconnier, M. Billard, F. Lugiez, A. Scavennec, P. Carer, Louis Giraudet
Publikováno v:
SPIE Proceedings.
The sensitivity of InGaAsIInP monolithic photoreceivers for 1 . 3 - 1. 5 . tm has been largely improved in recent years now reaching the sensitivity figures of hybrid InGaAs pin/GaAs MESFET receivers. The characteristics of an integrated InGaAsfJnP p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1f4ceb7d8e1551ec315c9f3064b3d712
https://doi.org/10.1117/12.24510
https://doi.org/10.1117/12.24510
Publikováno v:
ChemInform. 21
A study of the properties of As-doped and undoped GeMoW contacts prepared by different annealing techniques leads to the optimization of a new refractory ohmic contact consisting of an As-doped Ge-layer deposited by electron beam evaporation and sput
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::92d44ba0516dd0c1b3b31e70aa63bd22
https://doi.org/10.1002/chin.199030010
https://doi.org/10.1002/chin.199030010
Publikováno v:
Revue de Physique Appliquée
Revue de Physique Appliquée, Société française de physique / EDP, 1990, 25 (9), pp.941-945. ⟨10.1051/rphysap:01990002509094100⟩
Revue de Physique Appliquée, Société française de physique / EDP, 1990, 25 (9), pp.941-945. ⟨10.1051/rphysap:01990002509094100⟩
Des films de SiNx ont été déposés à basse température par UVCVD pour la passivation de photodiodes pin en GaInAs. La structure physique du SiNx a été évaluée par spectroscopie IR et ses caractéristiques électriques grâce à la réalisati
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2c232db1bf11466537f59e45a595576f
https://hal.archives-ouvertes.fr/jpa-00246260/file/ajp-rphysap_1990_25_9_941_0.pdf
https://hal.archives-ouvertes.fr/jpa-00246260/file/ajp-rphysap_1990_25_9_941_0.pdf
Autor:
R. Ngo, J. Pasquier, Fabienne Gaborit, T. Ducellier, E. Grard, P. Blanconnier, Frederic Pommereau, Louis Giraudet, Jean-Paul Hebert, P. Pagnod, M. Goix, S. Artigaud, O. Legouezigou, N. Tscherptner
Publikováno v:
Electronics Letters. 33:509
A compact high performance photoreceiver module including a low noise semiconductor optical amplifier (SOA), an optical filter, a wideband photodiode and a transimpedance amplifier has been realised and characterised. The measured sensitivity at 10 G
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::924e409f9774ab7f713c7eb406698afc
https://doi.org/10.1049/el:19970306
https://doi.org/10.1049/el:19970306
Publikováno v:
Journal of Applied Physics. 46:3549-3555
We have studied the photoluminescence of ZnSe doped by diffusion of Al at high temperature (1000–1100 °C) or by Ga at low temperature (600 °C). The diffused samples are highly conductive (0.1
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::59900caf8b1bd0c6c1480d6d3add5d2a
https://doi.org/10.1063/1.322266
https://doi.org/10.1063/1.322266
Publikováno v:
Journal of Lightwave Technology. 6:1507-1511
An integrated p-i-n/JFET/resistor has been developed using a GaInAs epitaxial structure grown on a planar substrate A four-layered structure allows separate optimization of both active devices. Owing to the good performances and high reliability of i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a0c7535fd61ba7428fa4a38c1591842f
https://doi.org/10.1109/50.7909
https://doi.org/10.1109/50.7909
Publikováno v:
Thin Solid Films. 55:375-386
Epitaxial ZnSe layers have been grown on GaAs substrates by the metal alkyl hydride technique. First we describe the design of the reactor geometry necessary in order to obtain constant thickness layers. Then the influence of the experimental conditi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::afd4c350638dd458eaf43d5b4a757b56
https://doi.org/10.1016/0040-6090(78)90154-2
https://doi.org/10.1016/0040-6090(78)90154-2
Publikováno v:
Le Journal de Physique Colloques. 49:C4-453
For GaInAs/InP junction field effect transistors as well as heterojunction bipolar transistors, the achievement of very low resistivity P type ohmic contact is a very critical step because the Schottky barrier height on these materials is quite high.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f7c68e4af2a8c5214e5c806b8e72bba4
https://doi.org/10.1051/jphyscol:1988496
https://doi.org/10.1051/jphyscol:1988496