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pro vyhledávání: '"P. Bayle-Guillemaud"'
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Autor:
Castioni Florian, Cuesta Sergi, Quéméré Patrick, Robin Eric, Delaye Vincent, Monroy Eva, Bayle-Guillemaud Pascale, Bernier Nicolas
Publikováno v:
BIO Web of Conferences, Vol 129, p 06013 (2024)
Externí odkaz:
https://doaj.org/article/ca987cb38da64ec98fe54d0076139824
Autor:
Boniface, Maxime, Quazuguel, Lucille, Danet, Julien, Guyomard, Dominique, Moreau, Philippe, Bayle-Guillemaud, Pascale
Continuous solid electrolyte interface (SEI) formation remains the limiting factor of the lifetime of silicon nanoparticles (SiNPs) based negative electrodes. Methods that could provide clear diagnosis of the electrode degradation are of utmost neces
Externí odkaz:
http://arxiv.org/abs/1611.04374
Autor:
de Reotier, P. Dalmas, Prestat, E., Bayle-Guillemaud, P., Barski, A., Marty, A., Jamet, M., Suter, A., Prokscha, T., Salman, Z., Morenzoni, E., Yaouanc, A.
Publikováno v:
Phys. Rev. B 91, 245408 (2015)
We have characterized a film of Ge_0.9Mn_0.1 forming self-organized nanocolumns perpendicular to the Ge substrate with high resolution scanning transmission electron microscopy combined with electron energy loss spectroscopy, and bulk magnetization a
Externí odkaz:
http://arxiv.org/abs/1405.4238
Autor:
Fruchart, Olivier, Masseboeuf, Aurélien, Toussaint, Jean-Christophe, Bayle-Guillemaud, Pascale
We developed the self-assembly of epitaxial submicrometer-sized face-centered-cubic (fcc) Co(111) dots using pulsed laser deposition. The dots display atomically-fl at facets, from which the ratios of surface and interface energies for fcc Co are ded
Externí odkaz:
http://arxiv.org/abs/1309.0793
Autor:
Tainoff, Dimitri, Barski, André, Prestat, Eric, Bourgault, Daniel, Hadji, Emmanuell, Liu, Yanqing, Bayle-Guillemaud, Pascale, Bourgeois, Olivier
We report on the elaboration of germanium manganese nanostructured thin films and the measurement of their thermoelectric properties. We investigate the growth of Ge:Mn layers along with a thorough structural characterization of this materials at the
Externí odkaz:
http://arxiv.org/abs/1301.1319
Autor:
Jain, A., Vergnaud, C., Peiro, J., Breton, J. C. Le, Prestat, E., Louahadj, L., Portemont, C., Ducruet, C., Baltz, V., Marty, A., Barski, A., Bayle-Guillemaud, P., Vila, L., Attané, J. -P., Augendre, E., Jaffrès, H., George, J. -M., Jamet, M.
In this letter, we first show electrical spin injection in the germanium conduction band at room temperature and modulate the spin signal by applying a gate voltage to the channel. The corresponding signal modulation agrees well with the predictions
Externí odkaz:
http://arxiv.org/abs/1204.4384
Autor:
Jain, A., Rojas-Sanchez, J. -C., Cubukcu, M., Peiro, J., Breton, J. C. Le, Prestat, E., Vergnaud, C., Louahadj, L., Portemont, C., Ducruet, C., Baltz, V., Barski, A., Bayle-Guillemaud, P., Vila, L., Attané, J. -P., Augendre, E., Desfonds, G., Gambarelli, S., Jaffrès, H., George, J. -M., Jamet, M.
Publikováno v:
Physical Review Letters 109, 106603 (2012)
Electrical spin injection into semiconductors paves the way for exploring new phenomena in the area of spin physics and new generations of spintronic devices. However the exact role of interface states in spin injection mechanism from a magnetic tunn
Externí odkaz:
http://arxiv.org/abs/1203.6491
Autor:
Arras, Emmanuel, Lançon, Frédéric, Slipukhina, Ivetta, Prestat, Éric, Rovezzi, Mauro, Tardif, Samuel, Titov, Andrey, Bayle-Guillemaud, Pascale, D'Acapito, Francesco, Barski, André, Favre-Nicolin, Vincent, Jamet, Matthieu, Cibert, Joël, Pochet, Pascal
Publikováno v:
Physical Review B 85, 11 (2012) 115204
We use extensive first principle simulations to show the major role played by interfaces in the mechanism of phase separation observed in semiconductor multifunctional materials. We make an analogy with the precipitation sequence observed in over-sat
Externí odkaz:
http://arxiv.org/abs/1203.2417
Autor:
Grenet, L., Arm, C., Warin, P., Pouget, S., Marty, A., Brenac, A., Notin, L., Bayle-Guillemaud, P., Jamet, M.
We investigate in this paper the origin of perpendicular anisotropy in Co (1.6 nm)/Pt (3.0 nm) bilayers grown on alumina and annealed up to 650$^{\circ}$C. Above 350$^{\circ}$C, all layers exhibit perpendicular anisotropy. Then coercive fields increa
Externí odkaz:
http://arxiv.org/abs/1110.2628