Ni2Si/4H-SiC Schottky photodiodes for ultraviolet light detection

Autor: M. Mazzillo 1, A. Sciuto 2, F. Roccaforte 2, C. Bongiorno 2, R. Modica 1, S. Marchese 1, P. Badala 1, D. Cali 1., F. Patane 1, B. Carbone 1, A. Russo 1, S. Coffa 1

Publikováno v: Materials science forum 858 (2016): 1015–1018. doi:10.4028/www.scientific.net/MSF.858.1015
info:cnr-pdr/source/autori:M. Mazzillo 1; A. Sciuto 2; F. Roccaforte 2; C. Bongiorno 2; R. Modica 1; S. Marchese 1; P. Badala 1; D. Cali 1.; F. Patane 1; B. Carbone 1; A. Russo 1; S. Coffa 1/titolo:Ni2Si%2F4H-SiC Schottky photodiodes for ultraviolet light detection/doi:10.4028%2Fwww.scientific.net%2FMSF.858.1015/rivista:Materials science forum/anno:2016/pagina_da:1015/pagina_a:1018/intervallo_pagine:1015–1018/volume:858

Ultraviolet (UV) monitoring is of great interest in the healthcare field to prevent excessive UV exposure risks. In the last years silicon carbide (SiC) has emerged as a suitable material for the fabrication of UV detectors. In this paper we propose

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