Zobrazeno 1 - 10
of 346
pro vyhledávání: '"P. A. Kashchenko"'
Autor:
Titova, Elena I., Kashchenko, Mikhail A., Miakonkikh, Andrey V., Morozov, Alexander D., Domaratskiy, Ivan K., Zhukov, Sergey S., Rumyantsev, Vladimir V., Morozov, Sergey V., Novoselov, Kostya S., Bandurin, Denis A., Svintsov, Dmitry A.
Electrically induced $p-n$ junctions in graphene bilayer (GBL) have shown superior performance for detection of sub-THz radiation at cryogenic temperatures, especially upon electrical induction of the band gap $E_g$. Still, the upper limits of respon
Externí odkaz:
http://arxiv.org/abs/2412.06918
Autor:
Mylnikov, Dmitry A., Kashchenko, Mikhail A., Safonov, Ilya V., Novoselov, Kostya S., Bandurin, Denis A., Chernov, Alexander I., Svintsov, Dmitry A.
Mid-infrared (mid-IR) photodetectors play a crucial role in various applications, including the development of biomimetic vision systems that emulate neuronal function. However, current mid-IR photodetector technologies are limited by their cost and
Externí odkaz:
http://arxiv.org/abs/2412.05977
Autor:
Semkin, Valentin, Shabanov, Aleksandr, Kapralov, Kirill, Kashchenko, Mikhail, Sobolev, Alexander, Mazurenko, Ilya, Myltsev, Vladislav, Nikulin, Egor, Chernov, Alexander, Kameneva, Ekaterina, Bocharov, Alexey, Svintsov, Dmitry
Two-dimensional materials offering ultrafast photoresponse suffer from low intrinsic absorbance, especially in the mid-infrared wavelength range. Challenges in 2d material doping further complicate the creation of light-sensitive $p-n$ junctions. Her
Externí odkaz:
http://arxiv.org/abs/2411.06480
Autor:
Shilov, A. L., Elesin, L., Grebenko, A., Kleshch, V. I., Kashchenko, M. A., Mazurenko, I., Titova, E., Zharkova, E., Yakovlev, D. S., Novoselov, K. S., Ghazaryan, D. A., Dremov, V., Bandurin, D. A.
Multilayer van der Waals (vdW) heterostructures have become an important platform in which to study novel fundamental effects emerging at the nanoscale. Standard nanopatterning techniques relying on electron-beam lithography and reactive ion etching,
Externí odkaz:
http://arxiv.org/abs/2406.16354
Autor:
Kravtsov, M., Shilov, A. L., Yang, Y., Pryadilin, T., Kashchenko, M. A., Popova, O., Titova, M., Voropaev, D., Wang, Y., Shein, K., Gayduchenko, I., Goltsman, G. N., Lukianov, M., Kudriashov, A., Taniguchi, T., Watanabe, K., Svintsov, D. A., Principi, A., Adam, S., Novoselov, K. S., Bandurin, D. A.
Publikováno v:
Nature Nanotechnology (2024)
Light incident upon materials can induce changes in their electrical conductivity, a phenomenon referred to as photoresistance. In semiconductors, the photoresistance is negative, as light-induced promotion of electrons across the band gap enhances t
Externí odkaz:
http://arxiv.org/abs/2403.18492
Autor:
Mylnikov, Dmitry A., Kashchenko, Mikhail A., Kapralov, Kirill N., Ghazaryan, Davit A., Vdovin, Evgenii E., Morozov, Sergey V., Novoselov, Kostya S., Bandurin, Denis A., Chernov, Alexander I., Svintsov, Dmitry A.
Graphene/hBN/graphene tunnel devices offer promise as sensitive mid-infrared photodetectors but the microscopic origin underlying the photoresponse in them remains elusive. In this work, we investigated the photocurrent generation in graphene/hBN/gra
Externí odkaz:
http://arxiv.org/abs/2312.05612
Autor:
Shein, K., Zharkova, E., Kashchenko, M. A., Kolbatova, A. I., Lyubchak, A., Elesin, L., Nguyen, E., Semenov, A., Charaev, I., Schilling, A., Goltsman, G. N., Novoselov, K. S., Gayduchenko, I., Bandurin, D. A.
Publikováno v:
Nano Letter 24, 7, 2282 - 2288, 2024
The rapid development of infrared spectroscopy, observational astronomy, and scanning near-field microscopy has been enabled by the emergence of sensitive mid- and far-infrared photodetectors. Owing to their exceptional signal-to-noise ratio and fast
Externí odkaz:
http://arxiv.org/abs/2311.13150
Autor:
Shilov, A. L., Kashchenko, M. A., Pantaleón, P. A., Kravtsov, M., Kudriashov, A., Zhan, Z., Taniguchi, T., Watanabe, K., Slizovskiy, S., Novoselov, K. S., Fal'ko, V. I., Guinea, F., Bandurin, D. A.
Publikováno v:
ACS Nano 2024
Twist-controlled moire superlattices (MS) have emerged as a versatile platform in which to realize artificial systems with complex electronic spectra. Bernal-stacked bilayer graphene (BLG) and hexagonal boron nitride (hBN) form an interesting example
Externí odkaz:
http://arxiv.org/abs/2311.05124
Autor:
Semkin, Valentin A., Shabanov, Aleksandr V., Mylnikov, Dmitry A., Kashchenko, Mikhail A., Domaratskiy, Ivan K., Zhukov, Sergey S., Svintsov, Dmitry A.
Publikováno v:
Nano Lett. 2023, 23, 11, 5250-5256
Structural or crystal asymmetry are necessary conditions for emergence of zero-bias photocurrent in light detectors. Structural asymmetry has been typically achieved via $p-n$ doping being a technologically complex process. Here, we propose an altern
Externí odkaz:
http://arxiv.org/abs/2303.16782
Autor:
M. E. Kutepov, V. E. Kaydashev, D. V. Stryukov, A. S. Konstantinov, A. S. Mikheykin, A. V. Nikolskiy, A. T. Kozakov, A. D. Morozov, M. A. Kashchenko, G. V. Alymov, E. M. Kaidashev
Publikováno v:
Journal of Advanced Dielectrics, Vol 14, Iss 06 (2024)
Decreasing the scale of vanadium dioxide (VO2) structures is one of the ways to enhance the switching speed of the material. We study the properties of VO2 films of altered thicknesses in the range of 20–170[Formula: see text]nm prepared on c-sapph
Externí odkaz:
https://doaj.org/article/c79cc7d025d64f1397eb5fa3383a751c
