Zobrazeno 1 - 10
of 16
pro vyhledávání: '"P. A. Bushuykin"'
Autor:
P. A. Bushuykin, V. Yu. Davydov, M. I. Kalinnikov, Pavel A. Yunin, A. V. Novikov, Z. F. Krasilnik, Artem N. Yablonskiy, L. V. Krasilnikova, E. V. Skorohodov, D. N. Lobanov, Boris A. Andreev
Publikováno v:
Semiconductors. 53:1357-1362
The results of studies of the spontaneous photoluminescence and stimulated emission spectra of epitaxial n-InN layers with a concentration of free electrons of ~1019 cm–3 are reported. The layers are grown by molecular-beam epitaxy with the plasma
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::63f147a96c1927b039265ed4124020a2
https://doi.org/10.1134/s1063782619100038
https://doi.org/10.1134/s1063782619100038
Autor:
A. V. Novikov, N. A. Baidakova, Pavel A. Yunin, Artem N. Yablonskiy, M. A. Kalinnikov, P. A. Bushuykin, D. V. Yurasov, Z. F. Krasilnik, Boris A. Andreev, M. N. Drozdov
Publikováno v:
Semiconductors. 53:1318-1323
Comparative studies of the luminescence properties of Sb-doped Ge layers grown on Ge(001) and Si(001) substrates are carried out. It is shown that, in contrast to the case of Ge:Sb layers grown on Si, a considerable contribution to the photoluminesce
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::41dd368a198b19b443377c53bad30a77
https://doi.org/10.1134/s1063782619100154
https://doi.org/10.1134/s1063782619100154
Autor:
M. N. Drozdov, A. I. Okhapkin, Pavel A. Yunin, E. V. Skorokhodov, S. A. Korolyov, S. A. Kraev, P. A. Bushuykin, V. I. Shashkin, E. A. Arkhipova
Publikováno v:
Semiconductors. 53:1203-1206
The plasma-chemical deposition of diamond-like carbon (DLC) films onto heavily boron-doped single-crystal p-type diamond (the concentration ~1020 cm–3) in CH4 + Ar plasma is conducted. The deposition rate is 7 nm min–1. The elemental composition
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dd8ec45485212cbb21b55a11e2079306
https://doi.org/10.1134/s1063782619090136
https://doi.org/10.1134/s1063782619090136
Autor:
A. V. Novikov, N.A. Baydakova, M. N. Drozdov, D. V. Yurasov, Pavel A. Yunin, P. A. Bushuykin, Boris A. Andreev, A. V. Antonov
Publikováno v:
Journal of Crystal Growth. 491:26-30
In this paper we report about the formation of ultra heavy doped n-Ge layers on Si(0 0 1) substrates by molecular beam epitaxy and their characterization by different independent techniques. Combined study of structural and electrical properties of f
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6468f7e68fc419b659ea407357d073e5
https://doi.org/10.1016/j.jcrysgro.2018.03.037
https://doi.org/10.1016/j.jcrysgro.2018.03.037
Autor:
P. A. Bushuykin, A. V. Novikov, Artem N. Yablonskiy, Boris A. Andreev, E. V. Skorokhodov, L. V. Krasilnikova, D. N. Lobanov, K. E. Kudryavtsev, Pavel A. Yunin, Z. F. Krasilnik, V. Yu. Davydov
Publikováno v:
Scientific Reports, Vol 8, Iss 1, Pp 1-8 (2018)
Scientific Reports
Scientific Reports
The observation of a stimulated emission at interband transitions in monocrystalline n-InN layers under optical pumping is reported. The spectral position of the stimulated emission changes over a range of 1.64 to 1.9 μm with variations of free elec
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2683a2bee651baf8e9f390c3b0b020c5
http://link.springer.com/article/10.1038/s41598-018-27911-2
http://link.springer.com/article/10.1038/s41598-018-27911-2
Autor:
Pavel A. Yunin, G. M. Savchenko, Boris A. Andreev, V. Yu. Davydov, E. V. Demidov, E. V. Skorokhodov, D. N. Lobanov, P. A. Bushuykin, A. V. Novikov, L. V. Krasilnikova
Publikováno v:
Semiconductors. 51:1537-1541
The results of studies of the photoexcitation spectra of epitaxial InN layers formed by molecular-beam epitaxy with the plasma activation of nitrogen are reported. The concentration of free charge carriers in the layers is 1018–1019 cm–3. The pho
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::978b189f2fc88977e109b0503eb62b25
https://doi.org/10.1134/s1063782617120041
https://doi.org/10.1134/s1063782617120041
Akademický článek
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Autor:
L. V. Krasilnikova, E. V. Skorohodov, P. A. Bushuykin, Boris A. Andreev, D. N. Lobanov, A. V. Novikov, Pavel A. Yunin
Publikováno v:
Semiconductors. 50:261-265
The results of investigations of the effect of the ratios of fluxes of the Group-III and -V elements on the structural and optical properties of an InN film deposited by plasma-assisted molecular-beam epitaxy (MBE) are presented. It is shown that the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::34d7fdc10b544e3fbca07b67ecc72ae9
https://doi.org/10.1134/s1063782616020159
https://doi.org/10.1134/s1063782616020159
Autor:
D. V. Yurasov, Pavel A. Yunin, P. A. Bushuykin, V. Ya. Aleshkin, A. V. Novikov, Artem N. Yablonskiy, Boris A. Andreev, N. A. Baidakova, Alexander A. Dubinov, Z. F. Krasilnik, M. N. Drozdov
Publikováno v:
Journal of Applied Physics. 127:165701
Comparative studies of the bandgap narrowing in antimony doped Ge layers grown on Si(001) and Ge(001) substrates are reported. The doping level in Ge:Sb layers was varied in such a way as to obtain structures with both full and partial electrical act
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cdabc053bebd480e1ce7b63a501bf987
https://doi.org/10.1063/1.5140072
https://doi.org/10.1063/1.5140072
Akademický článek
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
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