Zobrazeno 1 - 10
of 13
pro vyhledávání: '"P. A. Blagnov"'
Autor:
L. Wei, A. S. Vlasov, Jyh-Shyang Wang, J. Y. Chi, P. A. Blagnov, V. M. Ustinov, James L. Merz, A. R. Kovsh, Alexander Mintairov
Publikováno v:
Physica E: Low-dimensional Systems and Nanostructures. 21:385-389
Near-field magneto-photoluminescence scanning microscopy has been used to investigate the structural and optical properties of quantum-dot (QD)-like compositional fluctuations in GaAsN and InGaAsN alloys. Sharp spectral lines (halfwidth 0.5– 2 meV
Autor:
Alexander Mintairov, P. A. Blagnov, Sergey A. Nikishin, James L. Merz, V. G. Melehin, Henryk Temkin, Y. Qiu, N. N. Faleev
Publikováno v:
Physical Review B. 56:15836-15841
Raman spectra of coherently strained layers of ${\mathrm{GaAs}}_{1\ensuremath{-}x}{\mathrm{N}}_{x}$ grown on (001) GaAs with $x=0\char21{}0.05$ by metalorganic molecular-beam epitaxy are reported. The optical phonons of the GaAs and GaN types, as wel
Publikováno v:
AIP Conference Proceedings.
The simultaneous diffusion of Zn and P into InGaAs and GaSb from a local vapour phase source was investigated. Zn diffusion allowed to form a TPV cells with p‐layer (emitter) of 0.2–0.6 μm thickness without any additional post‐diffusion operat
Autor:
P. A. Blagnov, V. A. Solov’ev, David J. Brinker, Yu.A. Kudriavtsev, Carlos Vargas-Aburto, M. E. Boiko, R.M. Uribe, L.B. Karlina, V. V. Kozlovskii
Publikováno v:
Conference Record of the Twenty Sixth IEEE Photovoltaic Specialists Conference - 1997.
This paper reports on the radiation resistance of In/sub 0.53/Ga/sub 0.47/As (InGaAs) cells with a p/n configuration. These solar cells can be used as bottom cells in high-efficiency tandems with wide gap top cells and as thermophotovoltaic converter
Autor:
P. A. Blagnov, A. R. Kovsh, V.M. Ustinov, Jim Y. Chi, L. Wei, A. S. Vlasov, Jyh-Shyang Wang, Alexander Mintairov, James L. Merz
Publikováno v:
SPIE Proceedings.
A series of narrow emission lines (halfwidth 0.5 - 2 meV) corresponding to quantum-dot-like compositional fluctuations have been observed in low temperature near-field photoluminescence spectra of GaAsN and InGaAsN alloys. The estimation of the size,
Autor:
Alexander Mintairov, D. A. Vinokurov, K. Sun, Vadim Tokranov, A. S. Vlasov, Serge Oktyabrsky, P. A. Blagnov, James L. Merz, O. V. Kovalenkov, Chaodi Li
Publikováno v:
Scopus-Elsevier
Experimental and theoretical investigations of high-energy shifts of single InAs, InGaAs, InAlAs and InP quantum dot (QD) emission lines induced by contact pressure exerted by a near-field optical fiber tip are reported. “Pressure” coefficients o
Autor:
T. Kosel, Alexander Mintairov, A. S. Vlasov, R. E. Cook, James L. Merz, P. A. Blagnov, Victor M. Ustinov
Publikováno v:
Physical review letters. 87(27 Pt 1)
The localization of excitons on quantum-dot-like compositional fluctuations has been observed in temperature-dependent near-field magnetophotoluminescence spectra of InGaAsN. Localization is driven by the giant bowing parameter of these alloys and ma
Autor:
R. E. Cook, P. A. Blagnov, James L. Merz, A. S. Vlasov, Alexander Mintairov, T. Kosel, V. M. Ustinov
Publikováno v:
Scopus-Elsevier
We used near-field magneto-photoluminescence scanning microscopy to study structural and optical properties of quantum-dot-like compositional fluctuations in GaAsN and InGaAsN alloys. We show that these fluctuations manifest themselves by the appeara
Akademický článek
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.
Akademický článek
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.