Výsledky vyhledávání

The Influence of Gate Bias on the Anneal of Hot-Carrier Degradation

Autor: Kai-Hsin Chuang, Michiel Vandemaele, Ben Kaczer, Guido Groeseneken, Stanislav Tyaginov, Erik Bury

Publikováno v: IRPS
2020 IEEE International Reliability Physics Symposium (IRPS)

We observe that non-zero gate bias applied during a high temperature anneal following hot-carrier degradation (HCD) impacts degradation recovery in nFETs. The devices are arranged into custom-built arrays and fabricated in a commercial 40 nm bulk CMO

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e05a83f90a5a89e1397667c98b6d3ca7

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Akademický článek

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Akademický článek

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Si(100)–SiO2 interface properties following rapid thermal processing

Autor: Barry O'Sullivan, C. Leveugle, Paul K. Hurley, J. H. Das

Publikováno v: Journal of Applied Physics. 89:3811-3820

An experimental examination of the properties of the Si(100)-SiO2 interface measured following rapid thermal processing (RTP) is presented. The interface properties have been examined using high frequency and quasi-static capacitance-voltage (CV) ana

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c9897925b414bb081e259482f6319e7b
https://doi.org/10.1063/1.1343897

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A combined hard x-ray photoelectron spectroscopy and electrical characterisation study of metal/SiO2/Si(100) metal-oxide-semiconductor structures

Autor: Paul K. Hurley, Joseph C. Woicik, Gregory Hughes, Jun Lin, Lee A. Walsh

Combined hard x-ray photoelectron spectroscopy (HAXPES) and electrical characterisation measurements on identical Si based metal-oxide-semiconductor structures have been performed. The results obtained indicate that surface potential changes at the S

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::68cdba184fe75027fd0dca5410dd0025
https://hdl.handle.net/10468/4292

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Modification of the Oxide/Semiconductor Interface by High Temperature NO Treatments: A Combined EPR, NRA and XPS Study on Oxidized Porous and Bulk n-Type 4H-SiC

Autor: Robert P. Devaty, Sarit Dhar, Ian Vickridge, Hans Jürgen von Bardeleben, Y. Shishkin, Wolfgang J. Choyke, J. L. Cantin, John R. Williams, Leonard C. Feldman, L. Ke, Yong Wei Song

Publikováno v: HAL
5th European Conference on Silicon Carbide and Related Materials
5th European Conference on Silicon Carbide and Related Materials, Aug 2004, Bologna, Unknown Region. pp.277-280
Scopus-Elsevier

International audience; The effect of thermal treatments in nitric oxide (NO) on the paramagnetic defects at the 4H-SiC/SiO(2) interface are analyzed by EPR in oxidized porous samples. The results on ultrathin thermal oxides show that the NO treatmen

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4101c01145ae845bd1b8848c38d0d7c8
https://doi.org/10.4028/0-87849-963-6.277

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Interface defects in n-type 3C-SiC/SiO2: An EPR study of oxidized porous silicon carbide single crystals

Autor: von Bardeleben, Jurgen, Cantin, Jean-Louis, Ke, L, Shishkin, Y, Devaty, Rp, Choyke, Wj

Publikováno v: 5th European Conference on Silicon Carbide and Related Materials
5th European Conference on Silicon Carbide and Related Materials, Aug 2004, Bologna, Unknown Region. pp.273-276

International audience; The defects at the 3C-SiC/SiO2 interface have been studied by X-band EPR spectroscopy in oxidized porous 3C-SiC. One interface defect is detected; its spin Hamiltonian parameters, spin S=1/2, C-3V symmetry, g(//)=2.00238 and g

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=od______2417::05953e69aa0e4386ea149caaed20d81f
https://hal.science/hal-01288832

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